Simulation of extreme ultraviolet radiation of laser induced discharge plasma
Jun-Wu Wang,
Hong-Wen Xuan,
Hang-Hang Yu
et al.
Abstract:Extreme ultraviolet (EUV) light source is an important part of EUV lithography system in semiconductor manufacturing. The EUV light source requires that the 4p<sup>6</sup>4d<sup><i>n</i></sup>-4p<sup>5</sup>4d<sup><i>n</i>+1</sup> + 4d<sup><i>n</i>-1</sup>4f transitions of Sn<sup>8+~13+</sup> ions emit thousands of lines which form unresolved transition arrays near 13.5 nm. Laser-induced discharge plasma… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.