Abstract:The relationship between the performance of avalanche photodiode (APD) and structural parameters of the absorption, grading, and multiplication layers has been thoroughly simulated and discussed using the equivalent materials approach and Crosslight software. Based on separate absorption, grading, charge, and multiplication (SAGCM) structure, the absorption layer of APD was replaced with InGaAs/GaAsSb superlattice compared to conventional InGaAs/InP SAGCM APD. The results indicated that the breakdown voltage i… Show more
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