We have used numerical modeling to study the effect of diffusion and fluctuations in the nonequilibrium carrier density in the active layer of injection lasers based on an InAsSb/InAsSbP heterostructure on the angular distribution of the output intensity. We show that diffusion smoothes out the nonequilibrium carrier distribution in the active layer, and the fundamental lasing mode is stable over a much broader range of stripe contact widths. At the same time, diffusional processes can lead to formation of local regions with a jump in the density of nonequilibrium charge carriers, fluctuations in which can act as a source of instability for the fundamental lasing mode. Analysis of the numerical modeling results gives qualitative agreement with experimental data on the dependence of the angular distribution of the output radiation for different stripe contact widths.
Keywords: semiconductor injection laser, diffusion, fluctuations in the density of nonequilibrium charge carriers, angular distribution of output radiation.Introduction. The problem of stability of the output radiation parameters for semiconductor injection laser diodes lasing in the 2-4 μm region is of considerable importance, including for development of radiation sources for the needs of diode spectroscopy in the mid-IR range [1][2][3]. For this spectral region, laser diodes based on an InAsSb/InAsSbP heterostructure are quite promising. However, experimental studies have shown [4] that as the width of the stripe contact is increased (which is done to increase the output power), the angular distribution of the output radiation intensity changes considerably. According to numerical modeling results in [5], as the width of the stripe contact increases, in the active layer a unique structure is formed that consists of two or more "bunches" in which lasing in fact occurs. It is specifically such a spatial structure for the lasing energy distribution within the active layer that leads to the complex form of the angular distribution of the output intensity in the far zone.However, the calculations in [5] were performed without taking into account processes involving diffusion of the nonequilibrium charge carriers in the active layer, and these processes can smooth out inhomogeneities in the spatial distribution of nonequilibrium carriers. At the same time, as shown by the results in [6], the "bunched" spatial structure obtained for the distribution of nonequilibrium carriers is very sensitive to variation of the parameters determining the waveguide effects and under certain conditions can become unstable, when the structure of the "bunches" loses axial symmetry relative to the axis of the resonant cavity. The profile of the built-in waveguide is mainly determined by the dependence of the refractive index on the concentration of nonequilibrium carriers. The value of ∂n/∂N = 3⋅10 -25 m 3 assumed in [5] resulted in the best agreement between the calculated and experimental results. It agrees well with data for InAs and InSb structures [7,8], but exceeds the...