Simulation of Electron Transmittance and Tunneling Current in a Metal-Oxide- Semiconductor Capacitor with a High-K Dielectric Stack of HfO2 and SiO2 Using Exponential- and Airy-Wavefunction Approaches and a Transfer Matrix Method
Abstract:Analytical expressions of electron transmittance and tunneling current in a metal-oxide-semiconductor (MOS) capacitor with a high dielectric constant (high-K) oxide stack of HfO2 and SiO2 and a negative bias applied to the metal gate were derived. Exponential- and Airy-wavefunction approaches were employed in deriving analytically the electron transmittance and tunneling current. A numerical approach based on a transfer matrix method was used as a standard to evaluate the analytical approaches. It was found th… Show more
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