Simulation of Efficient Lead Sulfide Colloidal Quantum Dot Solar Cell using Spiro-OMeTAD as Hole Transport Layer

Abstract

In recent years, the advancement of solar cell technology is increased by leaps and bounds and it is also used to achieve a solution for the worldwide huge need for generation of energy and electricity. The colloidal quantum dot (CQD) offers a size-tuned bandgap and materials processing compatibility with a range of substrates. QDSC (Quantum dot solar cell) have advantages such as low cost, high efficiency, and replaces bulky material (Cadmium Selenide, Lead Selenide etc over traditional solar cell. “Despite these advantages, it lags due to carrier recombination in the Quasi-Neutral Region (QNR). The performance of the solar cell greatly depends on the electron transport layer (ETL) and hole transport layer (HTL). To investigate the feasibility of a highperformance device, a comparative investigation of the PbS-EDT and Spiro-OMeTAD hole transport layers has been done. For this, we have varied the various parameters upon which performance of solar cells is dependent in order to maximise the performance. All simulations study has been performed using SCAPS-1D simulator. The overall maximum optimized performance of the photovoltaic solar cell of 16.29% is obtained using TiO2 and PbS-TBAI(tetrabutylammonium iodide) as a ETL and absorber layer respectively. Our research demonstrates that an efficient quantum dot solar cell could be fabricated experimentally using the optimal device structure.

Optimization of Perovskite/Colloidal Quantum Dot Monolithic Tandem Solar Cell to Enhance Device Performance via Solar Cell Capacitance Simulator 1D

“…Theoretical [54] 15.06 Theoretical [55] 16.29 layer of the top cell. More spectrum would be absorbed in thick absorber layer of the top cell and hence, the absorption in bottom cell get decreases.…”

Impact on generation and recombination rate in Cu2ZnSnS4 (CZTS) solar cell for Ag2S and In2Se3 buffer layers with CuSbS2 back surface field layer

“…Here, the current densities of holes and electrons are represented by J p and J n , and D n (p) is the diffusion constant for electrons (holes) and p (n) for the mobility of holes (electrons). 35,36 3 | MATERIALS PARAMETERS energy should be greater than the BSF layer to bring the holes to the absorber/BSF interface, and the absorber layer electron affinity should be less than the buffer layer to extract the electron at the buffer/absorber interface. 34,37 First, take the base cell and replace the BSF layer with the CuSbS 2 .…”

“…The current densities are defined as follows after considering the drift and diffusion processes. Here, the current densities of holes and electrons are represented by J p and J n , and D n (p) is the diffusion constant for electrons (holes) and p (n) for the mobility of holes (electrons) 35,36 …”

Performance Enhancement of PbS‐TBAI Quantum Dot Solar Cell with MoTe2 as Hole Transport Layer

“…[ 11 ] Vaishali et al utilized ITO/TiO 2 /PbS‐TBAI/Au structure and attained V oc 782.6 mV, J sc 27.598 mA cm −2 , PCE 16.25%, and FF 76.2%. [ 12 ] R. Pandey et al worked with the device structure Au/PbS‐EDT/PbS‐TBAI/TiO2/ITO and obtained the efficiency 13.94%. [ 13 ] The PCE was further enhanced to 23.05% by Priyanka et al with a modified architecture ITO/WO 3 /PbS‐TBAI/Cu 2 O/Au.…”