Simulation of Critical IC-Fabrication Steps

Modelisation of boron diffusion from ultra-low-energy implantation in crystalline silicon

“…Using the model mentioned above, we have solved numerically by the partial differential equation solver PROMIS [8] the diffusion equations for Bi, I + , I 0 , boron substitutionals Bs, boron atoms in the boron clusters B Cl (B-I complexes), boron atoms in boron precipitates B ppt (B-B complexes) and boron atoms in the SiB layer B SiB . The experimental diffusion profiles are taken from Ref.…”

Boron diffusion in presence of defects induced by helium implantation

“…In order to study boron diffusion and reactivation, n-type 1 1 1 CZ wafers, uniformly doped at 1 × 10 14 implanted with helium in the energy range of 40-160 keV at doses of 1-5 × 10 16 He + cm −2 . Then, boron implantations were carried out at 5 keV with a dose of 2 × 10 13 B cm −2 .…”

“…Those results are discussed taking into account the structure of our samples analyzed by means of transmission electronic microscopy. Boron diffusion simulations have also been done through a numerical PDE solver PROMIS [14].…”

Cascade damage evolution: rate theory versus kinetic Monte Carlo simulations

“…It is important to note that this averaging implicitly wipes out the existing spatial correlations between defects and implies that clusters are considered to be homogeneously distributed in space in the RT model. Rate equations were solved using the partial differential equation solver PROMIS 1.5 [19].…”