Simulation of Cosmic-Ray Induced Soft Errors and Latchup in Integrated-Circuit Computer Memories

Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future

“…The general Bendel two-parameter model has the form (8) where is a cross section at energy in units of 10 upsets per proton/cm per bit, is the maximum upset cross section, and (9) where and are in megaelectronvolts.…”

“…An improved two-parameter Bendel model was suggested by two groups at about the same time and this is the form that currently has the widest acceptance [57], [58]. The two-parameter model is expressed as (10) where and are empirically determined constants unique to a device and is defined in (9).…”

“…The discovery of heavy ion-induced SEL was first published in 1979 by Kolasinski et al [9]. The authors reported on SEL induced in SRAMs by heavy ion nuclei.…”

Heavy-Ion Induced Single Event Upsets in a Bipolar Logic Device.

“…Since we have previously described the general techniques of testing ricrocircuits with heavy ions, 9 we limit our present discussion primarily to methods specifically applicable to the A112914. In Table I Delidded parts under test were placed on a special board inside the vacuum chamber.…”

Heavy‐ion induced current in MOS structure

“…If some of these pairs are collected by the electrodes, transient current is generated inside the circuit, causing a momentary change in characteristics (single event phenomenon: SEE) [1,2]. When a memory device is irradiated, this transient current induces memory state inversion (single event upset: SEU) or memory overwrite failure (single event latchup: SEL) [3][4][5]. Moreover, in recent years, multibit SEUs due to irradiation by a single particle have been reported in highdensity memory devices [6,7]; thus, there is a need for further improvement of radiation tolerance in semiconductor devices for space use.…”