Simulation of AlGaN/GaN MISFET With 3.6-GW/cm<sup>2</sup> High FOM by SIPOS Field Plates Electric Field Modulation

Duan, Baoxing; Ma, Junchao; Yang, Luoyun; Wang, Yulong; Yang, Yintang

doi:10.1109/ted.2022.3228827

Cited by 1 publication

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References 27 publications

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“…So, the electric field distribution in the drift region of the SIPOS-IGBT is also modulated to be uniform, which enables a thinner drift region like a superjunction structure or HK structure. Moreover, an electron accumulation layer can be formed along the SIPOS pillar during the on state [ 27 , 28 , 29 ], and in the SIPOS-IGBT, the accumulation layer increases the injection efficiency of the anode of the “PiN region” in the device, so the total carrier concentration in the drift region is increased. With the effects mentioned above, the Von value is significantly reduced.…”

Section: Device Structure and Mechanismmentioning

confidence: 99%

A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study

Yuan,

Yan,

et al. 2024

Micromachines

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A novel insulated gate bipolar transistor with Semi-Insulated POly Silicon (SIPOS) is presented in this paper and analyzed through TCAD simulation. In the off state, the SIPOS-IGBT can obtain a uniform electric field distribution, which enables a thinner drift region under the same breakdown voltage. In the on state, an electron accumulation layer is formed along the SIPOS, which can increase the injection level of the “PiN region” in the device, and the carrier concentration in the drift region is also increased due to the charge balance effect. Moreover, the SIPOS-IGBT can achieve a quick and thorough depletion in the drift region during the turn-off transient, which can greatly reduce the turn-off loss of the SIPOS-IGBT. These advantages improve the tradeoff between the conduction and switching losses. According to the simulation results, the SIPOS-IGBT obtained a 58% lower turn loss than that of a field-stop (FS) IGBT and 30% lower than an HK-IGBT with the same on-state voltage.

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Section: Device Structure and Mechanismmentioning

confidence: 99%

A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study

Yuan,

Yan,

et al. 2024

Micromachines

View full text Add to dashboard Cite

show abstract

Simulation of AlGaN/GaN MISFET With 3.6-GW/cm² High FOM by SIPOS Field Plates Electric Field Modulation

Cited by 1 publication

References 27 publications

A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study

A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study

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Simulation of AlGaN/GaN MISFET With 3.6-GW/cm2 High FOM by SIPOS Field Plates Electric Field Modulation

Cited by 1 publication

References 27 publications

A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study

A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study

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Simulation of AlGaN/GaN MISFET With 3.6-GW/cm² High FOM by SIPOS Field Plates Electric Field Modulation