Simulation of a significant increase in the transconductance of MOS transistors due to sectioning of the channel

Measurement of the electron saturation velocity in an AlGaAs/InGaAs quantum well

“…Further progress in this area is related to improvement in the technology of producing transistors, the use of new materials, and design optimization. The behavior of these transistors is typically modeled using different modifications of hydrodynamic models [2,3] taking into account the inertia of carrier heating by the electric field. The problem is that the results of calculations are difficult to verify experimentally, because many important parameters, such as the electron drift velocity and electric field distribution in the channel cannot be measured directly, even in ordinary gallium arsenide FETs.…”