Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga<sub>2</sub>O<sub>3</sub> Substrate for Emerging Terahertz Applications

Rao, G. Purnachandra; Baruah, Nistha; Lenka, Trupti Ranjan; Singh, Rajan; Sadaf, Sharif Md.; Nguyen, Hieu Pham Trung

doi:10.1109/icee56203.2022.10118010

2022 IEEE International Conference on Emerging Electronics (ICEE) 2022

DOI: 10.1109/icee56203.2022.10118010

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Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga₂O₃ Substrate for Emerging Terahertz Applications

G. Purnachandra Rao

Nistha Baruah

Trupti Ranjan Lenka

et al.

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Investigation of the Temperature Impact on the Performance Characteristics of the Field-Plated Recessed Gate III-Nitride HEMT on β-Ga2O3 Substrate

Purnachandra Rao,

Lenka,

Boukortt

et al. 2023

Lecture Notes in Electrical Engineering

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Investigation of the Temperature Impact on the Performance Characteristics of the Field-Plated Recessed Gate III-Nitride HEMT on β-Ga2O3 Substrate

Purnachandra Rao,

Lenka,

Boukortt

et al. 2023

Lecture Notes in Electrical Engineering

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Prospects of III–V Semiconductor-Based High Electron Mobility Transistors (HEMTs) Towards Emerging Applications

Raghuveera,

Purnachandra Rao,

Lenka

2023

Lecture Notes in Electrical Engineering

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Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga₂O₃ Substrate for Emerging Terahertz Applications

Cited by 2 publications

References 21 publications

Investigation of the Temperature Impact on the Performance Characteristics of the Field-Plated Recessed Gate III-Nitride HEMT on β-Ga2O3 Substrate

Investigation of the Temperature Impact on the Performance Characteristics of the Field-Plated Recessed Gate III-Nitride HEMT on β-Ga2O3 Substrate

Prospects of III–V Semiconductor-Based High Electron Mobility Transistors (HEMTs) Towards Emerging Applications

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Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3 Substrate for Emerging Terahertz Applications

Cited by 2 publications

References 21 publications

Investigation of the Temperature Impact on the Performance Characteristics of the Field-Plated Recessed Gate III-Nitride HEMT on β-Ga2O3 Substrate

Investigation of the Temperature Impact on the Performance Characteristics of the Field-Plated Recessed Gate III-Nitride HEMT on β-Ga2O3 Substrate

Prospects of III–V Semiconductor-Based High Electron Mobility Transistors (HEMTs) Towards Emerging Applications

Contact Info

Product

Resources

About

Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga₂O₃ Substrate for Emerging Terahertz Applications