2021
DOI: 10.56053/5.1.57
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Simulation design of silver nanoparticle coated photonic crystal fiber sensor based on surface plasmon resonance

Abstract: Surface Plasmon Resonance (SPR) is the charge density excitation oscillation (surface Plasmon’s, (SP)) caused by the polarized light along with the metal-dielectric interface by agreeing to phase-matching condition between polarized light and SPR. SPR method has unusual advantages like label-free, real-time and high resolutions with less than 10-7 RIU which is not consenting with other sensing methods. Photonic Crystal Fiber (PCF) presents unique features like design elasticity, geometric flexible and extraord… Show more

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Cited by 10 publications
(4 citation statements)
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“…We utilize the empirical pseudopotential method (EPM) and GGA method joined with the virtual crystal approximation (VCA). We compare the results of our binary compounds AlAs, AlP, GaAs, GaP , InAs and InP with the available theoretical [9] and experimental data from the literature, which are in good agreement. It is noted that the pseudo potential method gives a lattice constant greater than that given by the GGA one.…”
Section: Resultssupporting
confidence: 70%
“…We utilize the empirical pseudopotential method (EPM) and GGA method joined with the virtual crystal approximation (VCA). We compare the results of our binary compounds AlAs, AlP, GaAs, GaP , InAs and InP with the available theoretical [9] and experimental data from the literature, which are in good agreement. It is noted that the pseudo potential method gives a lattice constant greater than that given by the GGA one.…”
Section: Resultssupporting
confidence: 70%
“…Middle East and North America, genus Rosa includes mostly deciduous shrubs, and the fruits are rich in vitamins such as A, B3, C, D and E, in addition to citric acid and dyes, among others, China was the first to produce hybrid tea. Rose contains 200 species and nearly 1800 varieties [8].…”
Section: Introductionmentioning
confidence: 99%
“…GaN has received much attention because of its wide direct band gap 3.4 eV [1], and its promising potential for semiconductor optical and electronic devices, which are suitable for high temperature, high power, and high frequency applications. Typical techniques of GaN layer growth include metalorganic chemical vapor deposition (MOCVD) [2], reactive molecular beam epitaxy (MBE) [3], hydride vapor phase epitaxy (HVPE) [4] and reactive sputtering [5]. There is large number of reports on synthesis of GaN powders by chemical reaction [6,7], but synthesis of GaN thin films is still a challenge.…”
Section: Introductionmentioning
confidence: 99%