Simulation-Based Analysis of Thermo-Mechanical Constraints in Packages for Diamond Power Devices

Fuste, Naum; Aviñó-Salvadó, Oriol; Vellvehı́, M.; Perpiñà, X.; Godignon, P.; Seddon, Richard J.; Obieta, Isabel; Maudes, Jon; Jordà, X.

doi:10.1109/eurosime48426.2020.9152713

Cited by 3 publications

(2 citation statements)

References 21 publications

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“…For example, the difference in CTE and stiffness between diamond and die-attach materials will lead to thermal stress and thus lifetime degradation and reliability issues. Fusté et al [147] simulated the thermomechanical interaction between components in a diamond module. Simulation was conducted for a custom SOT-227 power module (figure 13) with Si, SiC and diamond.…”

Section: Diamond and Aln Devicesmentioning

confidence: 99%

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Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Qin

Albano

Spencer

et al. 2023

J. Phys. D: Appl. Phys.

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Power semiconductor device is a fundamental driver for advancement in power electronics, the technology for electric energy conversion. Power devices based on wide-bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductors allow for smaller chip size, lower loss and higher frequency as compared to the silicon (Si) counterpart, thus enabling a higher system efficiency and smaller form factor. Amongst the challenges for the development and deployment of WBG and UWBG devices is the efficient dissipation of heat, an unavoidable by-product of the higher power density. To mitigate the performance limitations and reliability issues caused by self-heating, thermal management is required at both device and package levels. Particularly, packaging is a crucial milestone for the development of any power device technology; WBG and UWBG devices have both reached this milestone recently. This paper provides a timely review on the thermal management of WBG and UWBG power devices with an emphasis on the packaged devices. Additionally, emerging UWBG devices hold good promise for high-temperature applications due to the low intrinsic carrier density and the increased dopant ionization at elevated temperatures. The fulfillment of this promise in system applications, in conjunction with overcoming the thermal limitations of some UWBG materials, require new thermal management and packaging technologies. To this end, we provide perspectives on the relevant challenges, potential solutions and research opportunities, highlighting the pressing needs for the device-package, electro-thermal co-design and the high-temperature packages that can withstand the high electric field expected in UWBG devices.

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Section: Diamond and Aln Devicesmentioning

confidence: 99%

mentioning

confidence: 99%