Simulation and optimization of HEMTs

Ilatikhameneh, Hesameddin; Ashrafi, Reza; Khorasani, Sina

doi:10.1109/actea.2016.7560101

Cited by 1 publication

(1 citation statement)

References 34 publications

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“…In this paper, we used Sentaurus Technology Computer Aided Design (TCAD) (2010 version, Synopsys Inc., Mountain View, CA, USA) to study the generation mechanism and scattering mechanism of 2DEG in the InAs channel [20]. In the simulation, the hydrodynamic model was chosen for electron transport, the drift-diffusion model was chosen for hole transport, the high-field-saturation mobility was chosen to be the mobility model, and the SRH recombination module was chosen to be the generation-recombination module.…”

Section: Simulation and Principle Analysismentioning

confidence: 99%

Channel Characteristics of InAs/AlSb Heterojunction Epitaxy: Comparative Study on Epitaxies with Different Thickness of InAs Channel and AlSb Upper Barrier

et al. 2019

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Because of the high electron mobility and electron velocity in the channel, InAs/AlSb high electron mobility transistors (HEMTs) have excellent physical properties, compared with the other traditional III-V semiconductor components, such as ultra-high cut-off frequency, very low power consumption and good noise performance. In this paper, both the structure and working principle of InAs/AlSb HEMTs were studied, the energy band distribution of the InAs/AlSb heterojunction epitaxy was analyzed, and the generation mechanism and scattering mechanism of two-dimensional electron gas (2DEG) in InAs channel were demonstrated, based on the software simulation in detail. In order to discuss the impact of different epitaxial structures on the 2DEG and electron mobility in channel, four kinds of epitaxies with different thickness of InAs channel and AlSb upper-barrier were manufactured. The samples were evaluated with the contact Hall test. It is found the sample with a channel thickness of 15 nm and upper-barrier layer of 17 nm shows a best compromised sheet carrier concentration of 2.56 × 1012 cm−2 and electron mobility of 1.81 × 104 cm2/V·s, and a low sheet resistivity of 135 Ω/□, which we considered to be the optimized thickness of channel layer and upper-barrier layer. This study is a reference to further design InAs/AlSb HEMT, by ensuring a good device performance.

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Section: Simulation and Principle Analysismentioning

confidence: 99%