Simulation and optimization of 420-nm InGaN/GaN laser diodes

Piprek, Joachim; Sink, R. K.; Hansen, Monica; Bowers, John E.; DenBaars, Steven P.

doi:10.1117/12.391430

Cited by 46 publications

(24 citation statements)

References 33 publications

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“…A wider ridge would substantially reduce the self-heating; however, the higher aspect ratio of the far-field as well as the enhanced probability of higher order lasing modes are not desirable. The influence of the number of quantum wells was previously investigated, and both experiment [29] and theory [30] find that two quantum wells is optimum.…”

Section: Laser Optimisationmentioning

confidence: 99%

Physics of high-power InGaN/GaN lasers

Piprek

Nakamura

2002

IEE Proceedings - Optoelectronics

159

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The authors analyse the performance and device physics of nitride laser diodes that exhibit the highest room-temperature continuous-wave output power. The analysis is based on advanced laser simulation. The laser model self-consistently combines band structure and freecarrier gain calculations with two-dimensional simulations of wave guiding, carrier transport and heat flux. Material parameters used in the model are carefully evaluated. Excellent agreement between simulations and measurements is achieved. The maximum output power is limited by electron leakage into the p-doped ridge. Leakage escalation is caused by strong self-heating, gain reduction and elevated carrier density within the quantum wells. Built-in polarisation fields are found to be effectively screened at high-power operation. Improved heat-sinking is predicted to allow for a significant increase of the maximum output power.

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Section: Laser Optimisationmentioning

confidence: 99%

Physics of high-power InGaN/GaN lasers

Piprek

Nakamura

2002

IEE Proceedings - Optoelectronics

159

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“…One possible reason for this abnormal temperature dependence might be related to nonuniform carrier distribution in the QWs of GaN LDs. It has been pointed out, by simulation, that carrier distribution in InGaN QWs would be quite inhomogeneous due to low hole mobility in (In, Al)GaN materials, which could affect LD performance significantly [12,13]. In order to interpret the experimental results, we calculated carrier density distribution and gain at two QWs.…”

Section: Simulation Resultsmentioning

confidence: 98%

Negative characteristic temperature of InGaN blue multiple‐quantum‐well laser diodes

Ryu

Lee

et al. 2007

Phys. Status Solidi (c)

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PACS 42.55. Px, 42.60.Lh We report anomalous temperature characteristics of InGaN laser diodes (LDs) emitting around 450 nm. Our blue LD shows negative characteristic temperature in the usual operation temperature range from 20 °C to 80 °C. This peculiar temperature characteristic is attributed to originate from unique carrier transport properties of InGaN quantum wells with high In composition, as deduced from the simulation of carrier density and optical gain. In addition, it is found that wall plug efficiency of the blue LD is even improved as temperature increases.

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“…d is the QW thickness and m n the effective mass of electrons in the In x Ga 1-x N QW active region, which was calculated using a linear interpolation from the InN and GaN extreme values [7]:…”

Section: Calculation Of the Transparency Concentrationmentioning

confidence: 99%

Stimulated emission and leakage current in In _x Ga _1–x N lasers

Mon

Sánchez

2005

phys. stat. sol. (c)

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In this paper we calculate the temperature dependence of the transparency concentration n 0 for In x Ga 1-x N/GaN single quantum well laser diodes. To establish the lasing mechanism existing in these lasers, this concentration is compared with that given by the Mott criterion limiting the existence of an excitonic gas or electron-hole plasma. For a typical structure with an In 0.13 Ga 0.87 N active layer n 0 results higher than the critical excitonic concentration. This result indicates that the conventional electron-hole plasma instead of excitonic recombination is the dominant mechanism responsible for lasing in nitride lasers. The contribution of the diffusion leakage current density to the total threshold current density was also calculated, considering both electron and hole components. We obtain that the electron leakage current density is more than a half of the total threshold current density, confirming it is the main loss mechanism present in these lasers.

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Simulation and optimization of 420-nm InGaN/GaN laser diodes

Cited by 46 publications

References 33 publications

Physics of high-power InGaN/GaN lasers

Physics of high-power InGaN/GaN lasers

Negative characteristic temperature of InGaN blue multiple‐quantum‐well laser diodes

Stimulated emission and leakage current in In _x Ga _1–x N lasers

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Simulation and optimization of 420-nm InGaN/GaN laser diodes

Cited by 46 publications

References 33 publications

Physics of high-power InGaN/GaN lasers

Physics of high-power InGaN/GaN lasers

Negative characteristic temperature of InGaN blue multiple‐quantum‐well laser diodes

Stimulated emission and leakage current in In x Ga 1–x N lasers

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Stimulated emission and leakage current in In _x Ga _1–x N lasers