Simulation and experimental results on the switching behaviour of bulk-barrier diodes

A study of the silicon Bulk-Barrier Diodes designed in planar technology by means of simulation

“…Several mechanisms can extend this switching time. According to [20] the total switching time for BBD's is given by: (11) Where:…”

“…According to [20] the switching time of BBDs is mainly determined by the depletion layer discharging time. This is associated with the finite time that takes to modulate the space charge in the depletion region.…”

“…(13) and (16) that the smallest resistance and the smallest capacitance determine the switching time τ SW and is strongly affected by the substrate dopand concentration N C [20]. Thus, by the proper choice of N C , the switching time can be reduced in the range of picoseconds.…”

“…This advantage over the classical Schottky diode makes them very attractive in many applications. There are several published works referring to the applications of such structures as photodiodes with high internal gain [4,9], high speed optoelectronic switches [10,-16] [20]. All the above published works refer to devices that are designed in non planar technology.…”

“…The simulation results of devices in planar technology are given and compared to those in non planar technology. Additionally, the simulation results were used to verify the validity of the analytical model [2,20] in the case of devices manufactured in planar technology. …”