Simulation and design of the emission wavelength of multiple quantum well structures fabricated by selective area metalorganic chemical vapor deposition

Reactor-scale uniformity of selective-area performance in InGaAsP system

“…In SAG, the PL wavelength of an In 1Àx Ga x As y P 1Ày bulk layer shifts to longer wavelength due to the difference of the parameter D/k s between the precursors of Ga and In, where D is their gas-phase mass diffusivity and k s is the rate constant of the surface incorporation [5]. Therefore, the distribution of the mask effect should be due to the variation of D/k s in the reactor.…”

“…As the integration of a device proceeds, the design of the mask pattern becomes mandatory. For this purpose, we developed a simulation tool that can predict the modulation of photoluminescence (PL) wavelength from the multiple quantum wells (MQWs) brought by a given shape of masks [5][6][7][8][9][10]. When we apply this SA-MOVPE technique to commercial production, large-scale reactors are necessary.…”

Vapor phase diffusion and surface diffusion combined model for InGaAsP selective area metal–organic vapor phase epitaxy

“…The temperature of the susceptor was 610 o C and the total pressure was 1.0 Â 10 4 Pa. Selective area masks were sputtered SiO 2 and formed on the InP (1 0 0) surface as in the preceding study [12]. A stripe growth area between masks was parallel to the [0 1 1] direction.…”

“…However, it is difficult to predict device characteristics based on the mask pattern used in SAG. Based on the research of the kinetics in the SAG of GaAs and InP layers [2][3][4][5][6][7][8][9][10][11], we have established the precise design method of bandgap wavelength originated from the variation of thickness and composition, except at near mask edges ($10 mm) [12]. That method employed the vapor-phase diffusion model [8,13].…”

Control of abnormal edge growth in selective area MOVPE of InP

“…When we extend this scheme to In 1Àx Ga x As y P 1Ày quaternary materials and quantum well structures [11][12][13], it is possible to predict the modulation of effective bandgaps in quantum well structures that is brought about by a given mask shape. Such simulation has been applied successfully to the SAG of In 1Àx Ga x As y P 1Ày quantum wells in wide stripes between masks [14]. However, when the width of the stripe is smaller than 20 mm, such a simulation based on gas-phase diffusion yields significant deviations from the experimental data [15].…”