Simulation and design of GaN/AlGaN far-infrared (λ∼34 μm) quantum-cascade laser

Jovanović, V. D.; Indjin, D.; Ikonić, Z.; Harrison, P.

doi:10.1063/1.1707219

Cited by 79 publications

(50 citation statements)

References 16 publications

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“…Both electron-LO phonon and electron-electron scattering mechanisms are taken into account. The population inversion up to ¦ j AE for a-plane and up to ¦ ® j AE for c-plane design is found resulting in feasible laser action [23]. These assumptions were confirmed by comparison between calculated modal gain and estimated waveguide and mirror losses, see Fig 2. To compare the performance of the various simulation methods, example calculations have been performed for a simple : 0.8, 3, 0.6, 3.5, 1, 6.5, 0.6, 11.2 for structure a) and 0.7, 3, 0.6, 3.9, 0.8, 7, 0.6 has just two low-lying subbands per period, the ground (HH1) and the first excited (LH1) subband, spaced by 27.5 meV, with the next (HH2) subband being much higher.…”

Section: T $supporting

confidence: 56%

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A physical model of quantum cascade lasers: Application to GaAs, GaN and SiGe devices

Harrison

Indjin

Jovanović

et al. 2005

Physica Status Solidi (a)

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Article:Harrison, P., Indjin, D., Jovanovic, V.D. et al. (7 more Harrison, P. and Indjin, D. and Jovanovic, V.D. and Mircetic, A. and Ikonic, Z. and Kelsall, R.W. and McTavish, J. and Savic, I. and Vukmirovic, N. and Milanovic, V. (2005) The philosophy behind this work has been to build a predictive 'bottom up' physical model of quantum cascade lasers (QCLs) for use as a design tool, to interpret experimental results and hence improve understanding of the physical processes occurring inside working devices and as a simulator for developing new material systems. The standard model uses the envelope function and effective mass approximations to solve two complete periods of the QCL under an applied bias. Other models, such as k.p and empirical pseudopotential, have been employed in p-type systems where the more complex band structure requires it. The resulting wave functions are then used to evaluate all relevant carrier-phonon, carrier-carrier and alloy scattering rates from each quantised state to all others within the same and the neighbouring period. This information is then used to construct a rate equation for the equilibrium carrier density in each subband and this set of coupled rate equations are solved self-consistently to obtain the carrier density in each eigenstate. The latter is a fundamental description of the device and can be used to calculate the current density and gain as a function of the applied bias and temperature, which in turn yields the threshold current and expected temperature dependence of the device characteristics. A recent extension which includes a further iteration of an energy balance equation also yields the average electron (or hole) temperature over the subbands. This paper will review the method and describe its application to mid-infrared and terahertz, GaAs, GaN, SiGe cascade laser designs. Repository paper

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Section: T $supporting

confidence: 56%

“…These includes Monte-Carlo simulation of mid-infrared [14] and terahertz [15][16][17] devices, nonequilibrium Green's function formalism [18,19], as well as self-consistent rate equations model [20][21][22]. Most recently this work is shifting towards designing THz QCL structures based on different material system [23][24][25].…”

mentioning

confidence: 99%

A physical model of quantum cascade lasers: Application to GaAs, GaN and SiGe devices

Harrison

Indjin

Jovanović

et al. 2005

Physica Status Solidi (a)

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“…The quasibound energies and associated wave functions are calculated with the intrinsic electric field induced by piezoelectric and spontaneous polarization included. The population inversion up to 25% is found resulting in feasible laser action [8]. Figure 2b shows electric field-current characteristics for three different lattice temperatures.…”

Section: Applicationsmentioning

confidence: 99%

Carrier Dynamics in Quantum Cascade Lasers

et al. 2005

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A fully quantum-mechanical model for carrier scattering transport in semiconductor intersubband devices was applied to modelling of carrier dynamics in quantum cascade lasers. The standard model uses the envelope function and effective mass approximations to solve electron band structure under an applied bias. The k · p model has been employed in p-type systems where the more complex band structure requires it. The resulting wave functions are then used to evaluate all relevant carrier-phonon, carrier-carrier and alloy scattering rates from each quantised state to all others within the same and the neighbouring period. This piece of information is then used to construct a rate equation for the equilibrium carrier density in each subband and this set of coupled rate equations are solved self-consistently to obtain the carrier density in each eigenstate. The latter is a fundamental description of the device and can be used to calculate the current density and gain as a function of the applied bias and temperature, which in turn yields the threshold current and expected temperature dependence of the device characteristics. A recent extension which includes a further iteration of an energy balance equation also yields the electron (or hole) temperature over the subbands. This paper will review the method and describe its application to mid-infrared and terahertz, GaAs, GaN, and SiGe cascade laser designs.

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“…6 These products are now commercially available for applications such as flame detection, UV imaging, solar UV detection, and military and industrial applications such as those focusing on agricultural and automotive products. Quantum well infrared photodetectors (QWIPs) 7 and GaN/AlGaN Schottky photodiodes, 8 operating in near-/mid-infrared (NIR/MIR) regions have been reported.…”

Section: Introductionmentioning

confidence: 99%

Dual band HEIWIP detectors with nitride materials

et al. 2007

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Detection of both UV and IR radiation is useful for numerous applications such as firefighting and military sensing. At present, UV and IR dual wavelength band detection requires separate detector elements. Here results are presented for a GaN/AlGaN single detector element capable of measuring both UV and IR response. The initial detector used to prove the dualband concept consists of an undoped AlGaN barrier layer between two highly doped GaN emitter/contact layers. The UV response is due to interband absorption in the AlGaN barrier region producing electron-hole pairs which are then swept out of the barrier by an applied electric field and collected at the contacts. The IR response is due to free carrier absorption in the emitters and internal photoemission over the work function at the emitter barrier interface, followed by collection at the opposite contact. The UV threshold for the initial detector was 360 nm while the IR response was in the 8-14 micron range. Optimization of the detector to improve response in both spectral ranges will be discussed. Designs capable of distinguishing the simultaneously measured UV and IR by using three contacts and separate IR and UV active regions will be presented. The same approach can be used with other material combinations to cover additional wavelength ranges, e.g. GaAs/AlGaAs NIR-FIR dual band detectors.

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Simulation and design of GaN/AlGaN far-infrared (λ∼34 μm) quantum-cascade laser

Cited by 79 publications

References 16 publications

A physical model of quantum cascade lasers: Application to GaAs, GaN and SiGe devices

A physical model of quantum cascade lasers: Application to GaAs, GaN and SiGe devices

Carrier Dynamics in Quantum Cascade Lasers

Dual band HEIWIP detectors with nitride materials

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