Simulation and characterization of the selective area growth process

Alam, Muhammad A.; People, R.; Isaacs, E. D.; Kim, Hyun-Tak; Evans‐Lutterodt, K.; Siegrist, T.; Pernell, T. L.; Vandenberg, J. M.; Sputz, S. K.; Chu, S. N. G.; Lang, D. V.; Smith, LaraE.; Hybertsen, Mark S.

doi:10.1063/1.123915

Cited by 50 publications

(50 citation statements)

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“…When the mask spacing becomes zero, two masks are connected, that is, the mask interference constant equals 1. From this figure, it is clear that the effective diffusion length of Ga species is longer than that of In species, which is consistent with the previous report [7].…”

Section: Article In Presssupporting

confidence: 93%

Mask interference effect in a densely arrayed waveguide fabricated by using narrow-stripe selective MOVPE

Sudo

Mori

Sasaki

2004

Journal of Crystal Growth

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Section: Article In Presssupporting

confidence: 93%

Mask interference effect in a densely arrayed waveguide fabricated by using narrow-stripe selective MOVPE

Sudo

Mori

Sasaki

2004

Journal of Crystal Growth

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“…For mask widths larger than 80 m strong roughening of the surface morphology occurs. This indicates the onset of large compositional changes in the Q 1.25 InGaAsP layer due to different diffusion lengths and surface reactivities of the group-III precursors ͑the group-V precursor supply is assumed to be not affected by the mask 5 ͒ although, in the case of TMI and TMG, the growth rate enhancement of InAs is only slightly larger compared to that of GaAs. 12 For the analysis of the structural and optical properties of the InAs QDs we focus on mask widths less than 80 m. Figure 2 shows the AFM images of the QDs formed by 2 ML InAs and 1 ML GaAs interlayer in unmasked areas for different mask widths.…”

Section: Methodsmentioning

confidence: 99%

“…5 Applied to quantum structures, the growth rate enhancement allows lateral tuning of the band gap energy through the quantum size effect which has been successfully demonstrated for quantum wells ͑QWs͒ ͑Refs. 6 and 7͒ and quantum dots ͑QDs͒.…”

Section: Introductionmentioning

confidence: 99%

Lateral wavelength control of InAs∕InGaAsP∕InP (100) quantum dots in the 1.55μm region by selective-area metal organic vapor-phase epitaxy

Zhou

Anantathanasarn

Veldhoven

et al. 2006

Journal of Applied Physics

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Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: www.tue.nl/taverne Take down policy If you believe that this document breaches copyright please contact us at: openaccess@tue.nl providing details and we will investigate your claim. We report lateral wavelength control of InAs quantum dots ͑QDs͒ embedded in InGaAsP on InP ͑100͒ substrates by selective-area metal organic vapor-phase epitaxy ͑SA MOVPE͒. The technologically important 1.55 m telecommunications wavelength region is assessed by the combination of ultrathin GaAs interlayers beneath the QDs with proper SiN x mask design. Atomic force microscopy and microphotoluminescence reveal evolution of the QDs formed by 2 ML InAs as a function of growth rate enhancement with pronounced height and density increase, resulting in a wide wavelength tuning range of 110 nm. Saturation of QD formation is observed for 3 ML InAs supply producing a much smaller tuning range of only 25 nm which is supported by the increasing GaAs interlayer thickness. Hence, two regimes are identified allowing either wide wavelength tuning or wavelength stability of QDs in the 1.55 m region offering complementary applications of the monolithic integration of optoelectronic devices by SA MOVPE.

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“…Lateral growth of III-V semiconductors is utilized to obtain integrated optical components through selective area epitaxy (SAE) [1,2] and to achieve dislocation density reduction when substrates are mismatched to the epitaxial overlayer through lateral epitaxial overgrowth (LEO) [3][4][5][6]. The kinetics of adatom attachment dominate lateral growth [7,8]; however, the relative surface energies of the different facets determine the equilibrium shape of the crystal [9].…”

Section: Introductionmentioning

confidence: 99%

Pendeoepitaxy of GaAs and In0.15Ga0.85As using laterally oxidized GaAs/Al0.96Ga0.04As templates

Cederberg

Waldrip

Peake

2004

Journal of Crystal Growth

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Simulation and characterization of the selective area growth process

Abstract: A simple three-dimensional vapor phase model is used to interpret and clarify the selective area growth process. The model predicts both normal and anomalous profiles of thickness and composition, including long range effects. These are verified by an extensive set of experiments.

Cited by 50 publications

References 6 publications

Mask interference effect in a densely arrayed waveguide fabricated by using narrow-stripe selective MOVPE

Mask interference effect in a densely arrayed waveguide fabricated by using narrow-stripe selective MOVPE

Lateral wavelength control of InAs∕InGaAsP∕InP (100) quantum dots in the 1.55μm region by selective-area metal organic vapor-phase epitaxy

Pendeoepitaxy of GaAs and In0.15Ga0.85As using laterally oxidized GaAs/Al0.96Ga0.04As templates

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