Simulation analyses of carrier dynamics in npn-type GaN-HBTs with different-hole-concentration p-base layers

Mase, Akira; Nikai, Yutaka; Iida, Yusuke; Takimoto, Masaya; Egawa, Takashi; Miyoshi, Makoto

doi:10.1109/csw55288.2022.9930408

2022 Compound Semiconductor Week (CSW) 2022

DOI: 10.1109/csw55288.2022.9930408

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Simulation analyses of carrier dynamics in npn-type GaN-HBTs with different-hole-concentration p-base layers

Akira Mase

Yutaka Nikai

Yusuke Iida

et al.

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Simulation analyses of carrier dynamics in npn-type GaN-HBTs with different-hole-concentration p-base layers

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