Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different hole-concentration p-base layers
Akira Mase,
Yusuke Iida,
Masaya Takimoto
et al.
Abstract:In this study, the operation of npn-type GaN-based heterojunction bipolar transistors with different net acceptor concentrations in p-base regions was simulated. It was confirmed that there is a critical net acceptor concentration (NA-ND) depending on the thickness of the base region and that if the NA-ND is lower than the critical value, the collector current may anomalously increase, regardless of base current injection. This phenomenon is caused by the punch-through process via the depletion layer extending… Show more
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