Simulated superior performances of semiconductor superjunction devices

Abstract

Performances of majority-and minority-carrier semiconductor superjunction devices are examined and compared to that of standard devices in terms of forward current density, reverse leakage current, and switching charge. Based on twodimensional simulations and theoretical calculations, it is shown that two orders of magnitude improvement in forward current density, an order of magnitude improvement in switching charge for majority-carrier superjunction devices, and an order of magnitude improvement in forward current density for minority-carrier superjunction devices are feasible when compared to standard devices.

A Review of techniques used in Lateral Insulated Gate Bipolar Transistor (LIGBT)

“…The conventional membrane LIGBT built on a thin membrane of 0.25µm achieved a BV more than 700V with higher current density than the super junction membrane LIGBT which exhibited only slightly increased BV due to doping tolerance impact [92][93] as it employed charge compensation techniques that led to virtually ideal square-type electric field distribution in the drift region. The conventional membrane LIGBT reported a record 50ns turn off time, which was much better than prior-art LIGBTs.…”

Conception de transistors MOS haute tension (1 200 volts) pour l'électronique de puissance

“…Malgré quelques progrès obtenus, entre autres, par l'augmentation du nombre de cellules élémentaires et la technologie de grille à tranchées, la limite théorique des composants unipolaires conventionnels était pratiquement atteinte dans cette gamme de tensions car tous les composants MOS utilisaient encore des zones de drift uniformément dopées. C'est le concept de la « Superjonction » qui, le premier, a permis de dépasser cette limite [22], [23], [24].…”

Enhancement of On-Resistance Characteristics Using Charge Balance Analysis Modulation in a Trench Filling Super Junction MOSFET

“…A much lower specific on-resistance can be achieved with SJ structures by using an excess breakdown voltage margin, and increasing the N-drift dose. Hence, this novel structure has a much lower specific on-resistance at a specific voltage level [5]. There are two SJ structures classified in fabrication process, multi-epi process SJ MOSFETs, such as CoolMOSTM [6][7] and trench filling SJ MOSFETs [9].…”