SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN

Parish, Giacinta; Keller, S.; DenBaars, Steven P.; Mishra, Umesh K.

doi:10.1007/s11664-000-0087-3

Cited by 130 publications

(75 citation statements)

References 30 publications

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“…This can be evidenced by the bumps of carbon concentration appearing in the SIMS profile as a result of the temperature dips when the temperature was being stabilized. The concentration of carbon in GaN is remarkably decreased with increasing growth temperature, from to $2.0 Â 10 18 cm À3 at 980 C to 1.8 Â 10 16 cm À3 at 1080 C. This can be explained by the model that Parish et al proposed 13 that carbon removal from the surface is facilitated by conversion of methyl groups from TMGa into methane with adsorbed hydrogen. At high temperature, more adsorbed hydrogen is available from the NH 3 and H 2 pyrolysis.…”

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confidence: 93%

“…Early studies show that the growth temperature and the V/III ratio influence the carbon incorporation, but only to a limited extent. 13,14 Growth pressure appears to be a more effective way to swing the incorporation of carbon. 9,10 However, one can expect that, as the growth pressure is varied, many other growth parameters are correspondingly changed at the same time, like wafer temperature, deposition profile, and effective V/III ratio.…”

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confidence: 99%

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Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure

Chen

Forsberg

Janzén

2013

Applied Physics Letters

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High tuneability of residual carbon doping is developed in a hot-wall metalorganic chemical vapor deposition reactor. Two orders of temperature-tuned carbon concentration, from ∼2 × 1018 cm−3 down to ∼1 × 1016 cm−3, can be effectively controlled in the growth of the GaN buffer layer. Excellent uniformity of two-dimensional electron gas (2DEG) properties in AlxGa1−xN/AlN/GaN heterostructure with very high average carrier density and mobility, 1.1 × 1013 cm−2 and 2035 cm2/V·s, respectively, over 3" semi-insulating SiC substrate is realized with the temperature-tuned carbon doping scheme. Reduction of carbon concentration is evidenced as a key to achieve high 2DEG carrier density and mobility

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confidence: 93%

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confidence: 99%

Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure

Chen

Forsberg

Janzén

2013

Applied Physics Letters

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“…Furthermore, since it has been shown that the residual impurities in AlGaN tend to increase with Al content, especially when the growth is not performed at a very high temperature, [16][17][18] using a sharp interface instead of inserting an AlN exclusion layer in the AlGaN/GaN heterostructure thus has a great potential of reducing impurity-related scattering and trapping effects. Both effects could adversely influence the 2DEG properties, especially when the hot electrons are injected or pushed into the AlN or high-Al-content AlGaN exclusion layer during high-field device operations.…”

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confidence: 99%

Room-temperature mobility above 2200 cm2/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

Chen

Persson

Nilsson

et al. 2015

Applied Physics Letters

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“…Oxygen easily reacts with Ga and especially Al and are therefore typically incorporated at high concentrations during growth of AlGaN [77]. Typically, O is present in form of residual water incorporated during wafer loading or introduced by the carrier or precursor gases.…”

Section: Unintentionally Doped Alganmentioning

confidence: 99%

“…It is noted that the measured n-type conductivity in reference layers of Al 0. 77 A room-temperature resistivity of 7 kΩ . cm was measured in Mg-doped layers of Al 0.85 Ga 0.15 N alloy composition, which is superior to the state-of-art values (paper 5).…”

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Doping of high-Al-content AlGaN grown by MOCVD

Nilsson¹

2014

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The high-Al-content Al x Ga 1-x N, x > 0.70, is the principal wide-band-gap alloy system to enable the development of light-emitting diodes operating at the short wavelengths in the deep-ultraviolet, λ < 280 nm. The development of the deep-ultraviolet light-emitting diodes (DUV LEDs) is driven by the social and market impact expected from their implementation in portable units for water/surface disinfection and based on the damaging effect of the deep-ultraviolet radiation on the DNA of various microorganisms. Internationally, intense research and technology developments occur in the past few years, yet, the external quantum efficiency of the DUV LEDs is typically below 1%.One of the main material issues in the development of the DUV LEDs is the achievement of n-and ptype high-Al-content Al x Ga 1-x N layers with low resistivity, which is required for the electrical pumping of the diodes. The doping process becomes significantly more complex with increasing the Al content and the electrical resistivity is as high as 10 1 -10 2 Ω . cm for n-type AlN doped by silicon, and 10 7 -10 8 Ω cm for p-type AlN doped by magnesium.The present study was therefore focused on gaining a better understanding of the constraints in the doping process of the high-Al-content Al x Ga 1-x N alloys, involving mainly silicon. For this purpose, the epitaxial growth of the high-Al-content Al x Ga 1-x N and AlN by implementing the distinct hot-wall MOCVD was developed in order to achieve layers of good structural and morphological properties, and with low content of residual impurities, particularly oxygen and carbon. Substitutional point defects O N and C N may have a profound impact on the doping by their involvement in effects of ntype carrier compensation. The process temperature was varied between 1000 and up to 1400 °C, which is a principal advantage in order to optimize the material properties of the high-Al-content Al x Ga 1-x N and AlN. The epitaxial growth of the high-Al-content Al x Ga 1-x N and AlN was largely performed on 4H-SiC substrates motivated by (i) the lattice mismatch of ~ 1% along the basal plane (the smallest among other available substrates including Si and sapphire), (ii) the good thermal conductivity of 3.7 W cm -1 K -1 , which is essential to minimize the self-heating during the operation of any light-emitting diode, and (iii) the limited access to true-bulk AlN wafers. The outcome of this study is accordingly summarized and presents our understanding for (i) the complex impact of silicon and oxygen on the n-type conductivity of Al 0.77 Ga 0.23 N, representative for the alloy composition at which a drastic reduction of the n-type conductivity of Al x Ga 1-x N is commonly reported (paper 1); (ii) the strain and morphology compliance during the intentional iv doping by silicon and magnesium, and its correlation with the resistivity of highly doped layers of Al 0.82 Ga 0.18 N alloy composition (paper2); (iii) the n-type conductivity of highly Si-doped Al 0.72 Ga 0.28 N as bound by the process temperature (p...

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SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN

Cited by 130 publications

References 30 publications

Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure

Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure

Room-temperature mobility above 2200 cm2/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

Doping of high-Al-content AlGaN grown by MOCVD

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