SIMS depth profiling of implanted helium in pure iron using CsHe+ detection mode

Lefaix-Jeuland, H.; Moll, S.; Legendre, F.; Jomard, François

doi:10.1016/j.nimb.2012.11.003

Cited by 12 publications

(7 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Reliable, quantitative depth profiles for He are highly desirable for materials used in nuclear reactions and fusion physics as well as for extraterrestrial materials irradiated by solar wind and cosmic rays . SIMS is considered to be an extremely sensitive micro‐area analytical technique, which can provide elemental depth profiles of solid surfaces .…”

Section: Introductionmentioning

confidence: 99%

“…SIMS is considered to be an extremely sensitive micro‐area analytical technique, which can provide elemental depth profiles of solid surfaces . Quantification of He is often difficult, however, because of the extremely low secondary‐ionization yields resulting from its high ionization energy . Recently, sputtered neutral mass spectrometry (SNMS) was successfully used to measure the depth‐profile distribution of solar wind helium from a NASA Genesis target .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Quantitative analysis of helium by post‐ionization method using femtosecond laser technique

Yurimoto

Bajo

Sakaguchi

et al. 2016

Surface & Interface Analysis

View full text Add to dashboard Cite

Helium has the largest ionization potential of all elements; thus, it is difficult to ionization for measurement by mass spectrometry. In order to analyze He, a tunnel-ionization time-of-flight sputtered neutral mass spectrometry system (called LIMAS) has recently been developed. LIMAS uses a femto-second laser technique, and can ionize He to achieve ~10% ionization yields [1]. We quantified the effectiveness of this method for He analysis from a 2.5 × 4 µm 2 area of He-implanted silicon. The amount of He in a implant was quantified by measuring the ion-current, giving a nominal implant fluence per unit area. Thus, the fraction of total He measured by LIMAS during depth profiling could be quantified by comparison with the He-concentration of the reference implant. The He + intensities normalized by host ions of Si linearly correlated with the known He concentrations with a reproducibility of 10% at concentrations less than 10 21 cm -3 . The detection limit was down to 10 18 He cm -3 (20 ppm). For concentrations exceeding 10 21 cm -3 , the He intensities are smaller than those expected from the lower concentration range. This non-linearity may reflect the limit of retention of He in the Si lattice, since He is chemically inert.2

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Quantitative analysis of helium by post‐ionization method using femtosecond laser technique

Yurimoto

Bajo

Sakaguchi

et al. 2016

Surface & Interface Analysis

View full text Add to dashboard Cite

show abstract

“…It has been reported by Lefaix-Jeuland et al 22 that SIMS was very effective when used for measuring the distribution of He implanted into mono and poly crystalline iron samples. Primary Cs + ions combined with He to form detectable CsHe + ions which allowed concentration levels of He above 60 mg g À1 to be measured.…”

Section: Element Matrixmentioning

confidence: 99%

Atomic spectrometry update: review of advances in the analysis of metals, chemicals and materials

Carter

Clough

Fisher

et al. 2020

J. Anal. At. Spectrom.

View full text Add to dashboard Cite

show abstract

“…The dynamic SIMS technique proves extremely useful for a wide range of nuclear science applications: study of fission products behavior in nuclear materials, [1][2][3][4][5][6][7][8][9][10][11] characterization of plasma facing materials in fusion devices, [12][13][14] investigation of long-term behavior of nuclear materials for safe waste disposal, 15,16 uranium isotope analysis on environmental samples collected from nuclear handling facilities in the search for undeclared nuclear activities, [17][18][19][20][21] and study of uranium accumulation processes in human tissues and cells. [22][23][24] Dynamic SIMS is considered to be a major analytical technique for nuclear fuel characterization and is complementary to other techniques used in this field.…”

Section: Introductionmentioning

confidence: 99%

Dynamic SIMS for materials analysis in nuclear science

Peres

Choi

Desse

et al. 2018

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

Offering high sensitivity, depth profiling and ion imaging capabilities together with high throughput, dynamic secondary ion mass spectrometry (SIMS) proves extremely useful for a wide range of nuclear science applications. The CAMECA IMS 7f/7f-Auto is a versatile magnetic sector SIMS well suited for such applications. In this work, various examples of material analyses that are of interest for nuclear science are presented: depth profiling of the xenon and mapping of contaminants in CeO 2 , in-depth distribution of iodine in SiC using the energy filtering technique for improving the I detection limit, and depth profiling analysis of molybdenum in UO 2 using eucentric sample rotation for minimizing surface roughness development (thus improving data quality).

show abstract

SIMS depth profiling of implanted helium in pure iron using CsHe+ detection mode

Cited by 12 publications

References 8 publications

Quantitative analysis of helium by post‐ionization method using femtosecond laser technique

Quantitative analysis of helium by post‐ionization method using femtosecond laser technique

Atomic spectrometry update: review of advances in the analysis of metals, chemicals and materials

Dynamic SIMS for materials analysis in nuclear science

Contact Info

Product

Resources

About