SIMS analytical technique for PV applications

Peres, P.; Merkulov, A.; Desse, F.; Schuhmacher, M.

doi:10.1002/sia.3525

Cited by 6 publications

(4 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Review papers describe both the contribution of SIMS to material science and the prospects for its use in new analytical challenges [154][155][156]. It is clear that in the near future, in order to meet social and economic challenges in the fields of energy conversion [157][158][159][160] and storage [161], nanomaterials or microelectronics [162,163], whose structures are becoming increasingly complex in all three dimensions, SIMS will continue to be a widely used technique.…”

Section: Materials Sciencementioning

confidence: 99%

Highest resolution chemical imaging based on secondary ion mass spectrometry performed on the helium ion microscope

Audinot¹,

Philipp²,

Castro³

et al. 2021

Rep. Prog. Phys.

View full text Add to dashboard Cite

This paper is a review on the combination between Helium Ion Microscopy (HIM) and Secondary Ion Mass Spectrometry (SIMS), which is a recently developed technique that is of particular relevance in the context of the quest for high-resolution high-sensitivity nano-analytical solutions. We start by giving an overview on the HIM-SIMS concept and the underlying fundamental principles of both HIM and SIMS. We then present and discuss instrumental aspects of the HIM and SIMS techniques, highlighting the advantage of the integrated HIM-SIMS instrument. We give an overview on the performance characteristics of the HIM-SIMS technique, which is capable of producing elemental SIMS maps with lateral resolution below 20 nm, approaching the physical resolution limits, while maintaining a sub-nanometric resolution in the secondary electron microscopy mode. In addition, we showcase different strategies and methods allowing to take profit of both capabilities of the HIM-SIMS instrument (high-resolution imaging using secondary electrons and mass filtered secondary sons) in a correlative approach. Since its development HIM-SIMS has been successfully applied to a large variety of scientific and technological topics. Here, we will present and summarise recent applications of nanoscale imaging in materials research, life sciences and geology.

show abstract

Section: Materials Sciencementioning

confidence: 99%

Highest resolution chemical imaging based on secondary ion mass spectrometry performed on the helium ion microscope

Audinot¹,

Philipp²,

Castro³

et al. 2021

Rep. Prog. Phys.

View full text Add to dashboard Cite

show abstract

“…Secondary ion mass spectrometry (SIMS) is a powerful technique for chemical analysis of solid materials, and has been used for impurity concentration analysis in semiconductors for many years [1][2][3]. Under well-optimized measurement conditions, SIMS has a potential to detect impurities at ppb level or lower (10 14 cm -3 in SiC) [4]. The measurement conditions have to be optimized for each impurity element and matrix material, and the obtained data should be examined carefully since issues like mass interference differ from case to case.…”

Section: Introductionmentioning

confidence: 99%

SIMS Analysis of Fe Impurity Concentration in a PVT-Grown 4H-SiC Bulk Crystal and Source Powders

Iwamoto

Azarov

Vines

et al. 2015

MSF

View full text Add to dashboard Cite

Iron (Fe) impurity concentrations in a SiC bulk crystal and source powders used for the bulk crystal growth are analyzed by means of secondary ion mass spectrometry and the validity of the obtained data are discussed. The secondary ion signal of56Fe is found to be affected significantly by the mass interference of28Si2, and therefore measurements of54Fe instead of56Fe offer a better detection limit for the analysis. A high concentration of Fe is found at proximity of the SiC bulk crystal surface. Possible sources of the Fe contamination are discussed based on the depth profile data of Fe in both the bulk crystal and the source powders.

show abstract

“…In the case of applying SIMS, XRF, and EPMA, standard samples with compositions close to the unknown samples are required in order to accurately analyze CIGS thin films . However, it is difficult to obtain standard samples with various concentrations for CIGS.…”

Section: Introductionmentioning

confidence: 99%

“…In the case of applying SIMS, XRF, and EPMA, standard samples with compositions close to the unknown samples are required in order to accurately analyze CIGS thin films. [18] However, it is difficult to obtain standard samples with various concentrations for CIGS. We have previously reported quantitative analysis data that were obtained from a depth profile of SIMS for CIGS layers and from the relative sensitivity factor (RSF) value calculated by the mole fraction of EPMA.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Cu(InGa)Se₂ (CIGS) thin films in solar cell devices

Lim

Lee

Won

et al. 2012

Surface & Interface Analysis

View full text Add to dashboard Cite

Cu(InGa)Se 2 (CIGS) thin-film solar cells are expected to be the next generation of solar cells because of their economical manufacturing cost and high yield process. In order to develop an efficient thin-film CIGS structure, however, a quantitative composition analysis of major elements is necessary. Quantitative analysis of CIGS was carried out by means of inductively coupled plasma-atomic emission spectrometry (ICP-AES), x-ray fluorescence, a wavelength-dispersed electron probe microanalysis (EPMA), and dynamic SIMS. The ratio of each element that comprises CIGS was determined by an ICP-AES analysis, which was performed by dissolving the entire CIGS sample. A reproducible and rapid semi-quantified analysis of CIGS can be conducted by using x-ray fluorescence and electron probe microanalysis and comparing the results to the certified composition of ICP-AES. Quantitative analysis data for CIGS were also obtained from SIMS depth profiling, and the relative sensitivity factor value was calculated by using the mole fraction of ICP-AES as a reference value for the composition. The atomic force microscopy results indicate that the reproducibility of the SIMS analysis was related to the surface roughness of the CIGS sample.

show abstract

SIMS analytical technique for PV applications

Cited by 6 publications

References 1 publication

Highest resolution chemical imaging based on secondary ion mass spectrometry performed on the helium ion microscope

Highest resolution chemical imaging based on secondary ion mass spectrometry performed on the helium ion microscope

SIMS Analysis of Fe Impurity Concentration in a PVT-Grown 4H-SiC Bulk Crystal and Source Powders

Characterization of Cu(InGa)Se₂ (CIGS) thin films in solar cell devices

Contact Info

Product

Resources

About

SIMS analytical technique for PV applications

Cited by 6 publications

References 1 publication

Highest resolution chemical imaging based on secondary ion mass spectrometry performed on the helium ion microscope

Highest resolution chemical imaging based on secondary ion mass spectrometry performed on the helium ion microscope

SIMS Analysis of Fe Impurity Concentration in a PVT-Grown 4H-SiC Bulk Crystal and Source Powders

Characterization of Cu(InGa)Se2 (CIGS) thin films in solar cell devices

Contact Info

Product

Resources

About

Characterization of Cu(InGa)Se₂ (CIGS) thin films in solar cell devices