SIMS analysis of silicon on insulator structures formed by high-dose O+ implantation into silicon

Kilner, John A.; Littlewood, S. D.; Hemment, P.L.F.; Maydell-Ondrusz, E.A.; Stephens, K.G.

doi:10.1016/0167-5087(83)91045-1

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SIMS analysis of silicon on insulator structures formed by high-dose O+ implantation into silicon

Cited by 22 publications

References 10 publications

Quantification of SIMS Dopant Profiles in High-Dose Oxygen-Implanted Silicon, Using a Simple Two-Matrix Model

Quantification of SIMS Dopant Profiles in High-Dose Oxygen-Implanted Silicon, Using a Simple Two-Matrix Model

Analysis by absorption and scattering of radiation

The effects of different implantation and annealing temperatures on the structural and chemical properties of high dose oxygen-ion-implanted silicon

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