SIMS analyses of ultra-low-energy B ion implants in Si: Evaluation of profile shape and dose accuracy

Magee, C. W.; Hockett, R. S.; Büyüklimanli, Temel; Abdelrehim, Ihab M.; Marino, John

doi:10.1016/j.nimb.2007.04.296

Cited by 18 publications

(10 citation statements)

References 9 publications

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“…The SIMS profiles of phosphorus were analyzed using a point-topoint correction protocol [9] because the ion yield and sputtering rate in the oxide layer are different from that in bulk silicon. Quantitative analysis of dopants near the surface is difficult for SIMS because ion reactions are not in equilibrium.…”

Section: Resultsmentioning

confidence: 99%

“…Redistribution of phosphorus and carbon was measured by secondary ion mass spectrometry (SIMS) at Evans Analytical Group using Cs as the primary ion source. A point-by-point corrected profile protocol [9] was used to obtain the depth profiles of phosphorus. X-ray photoelectron spectroscopy (XPS) was performed to monitor phosphorus redistribution near the surface region.…”

Section: Methodsmentioning

confidence: 99%

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Suppression of uphill diffusion caused by phosphorus deactivation using carbon implantation

Chang

Ling

2015

Applied Surface Science

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Suppression of uphill diffusion caused by phosphorus deactivation using carbon implantation

Chang

Ling

2015

Applied Surface Science

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“…This has been accomplished by various groups using techniques such as medium-energy ion scattering (MEIS) or high-resolution Rutherford backscattering (HR-RBS). 99 One group has even proposed using reactive ion etching to further reduce impact energy. 100 With the advent of FinFET and other 3D devices, techniques such as atom probe or scanning spreading resistance microscopy (SSRM) may be more suited for dopant characterisation as the planar implant profile is no longer representative of doping on sidewalls of devices.…”

Section: Microelectronicsmentioning

confidence: 99%

Secondary Ion Mass Spectrometry

Sangely

Boyer

Chambost

et al. 2014

Sector Field Mass Spectrometry for Elemental and Isotopic Analysis

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i Commissariat à l'énergie atomique et aux énergies alternatives, DEN Cadarache, France; j Commissariat à l'énergie atomique et aux énergies alternatives,The basic principle of SIMS is that a focused beam of energetic ions (so-called primary ions) is targeted onto the surface of a solid sample. Primary ions dissipate their energy, leading to the sputtering and ionisation of the outmost atoms of the sample surface. The resulting secondary ions are accelerated and transferred to a magnetic analyser.

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“…Dopant profiles were measured by secondary ion mass spectroscopy (SIMS) using Point-by-point Correction technology (PCOR-SIMS SM ) developed by Evans Analytical Group. This methodology has a depth resolution of 0.5 nm, and is designed specifically 25 to avoid the spurious appearance of dopant pile-up that traditional SIMS often yields [26][27][28] within the first few nanometers of the surface. SIMS was performed with any native or grown oxide from the annealing step left in place, and the oxygen signal was monitored to identify the location of the Si-SiO 2 interface.…”

mentioning

confidence: 99%

Interface-Mediated Photostimulation Effects on Diffusion and Activation of Boron Implanted into Silicon

Kondratenko

Seebauer

2013

ECS J. Solid State Sci. Technol.

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Recent work has demonstrated the existence of nonthermal illumination effects on the diffusion of boron, arsenic, and isotopic silicon ion-implanted into silicon for ultra-shallow junction applications. In some cases, the degree of electrical activation is affected as well. The effects arise from super-bandgap light's direct action on bulk point defects via changes in their charge state. By contrast, the present work demonstrates the existence of a distinct mechanism whereby light acts indirectly on bulk defects via changes at a nearby interface. The changes occur in interfacial annihilation probability and/or electric potential, and affect the efficiency with which the interface absorbs point defects emitted by extended end-of-range defects during annealing.Formation of shallow pn junctions for integrated circuits requires ion implantation of dopants followed by annealing to reduce implantation damage and to promote electrical activation of the dopants. Annealing technology relies upon rapid heating by incandescent lamps, flash lamps or lasers. 1 The optical stimulation was long thought to supply heating alone, although scattered experimental evidence had hinted at additional nonthermal influences on diffusion and activation of phosphorous, 2 arsenic, 3-5 and boron. 4,6-8 However, the experiments were difficult to interpret reliably because lamps supplied the heating, thereby complicating the decoupling of heating and photostimulation effects. Some progress was achieved in quantifying photoenhanced diffusion in II-VI semiconductors (using computational methods) 9 and a-Si:H (experimentally), 10 yet the understanding of the photostimulated dopant diffusion in c-Si remained inadequate. This laboratory has employed a novel experimental configuration to eliminate the ambiguity, and has thereby demonstrated the influences of low-intensity (<1 W/cm 2 ) super-bandgap illumination − first on the surface diffusion of various adsorbates on Si, 11,12 and subsequently on the bulk self-diffusion of Si 13,15 as well as the bulk diffusion and electrical activation of As and B implanted into silicon. 14 As first suggested for surface diffusion 11,12,15,16 and later modeled quantitatively for bulk Si self-diffusion, 13 photostimulation can influence diffusional flux rates by changing the average electrical charge state of point defects involved with diffusion, although the exact mechanism depends upon the specific case. For surface diffusion of Group III, IV and V elements on Si, the mass flux is carried by adatoms that can be rendered immobile by substitution into the top layer of the substrate. Escape from this substitutional state leaves behind a surface vacancy that can take on a variety of charge states depending upon the local concentrations of electrons and holes. Photostimulation exerts its influence by changing these carrier concentrations, which propagates into the average charge state of the vacancies, then into the effective formation energy for creating an adatom and vacancy, and finally into the concentration of ad...

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SIMS analyses of ultra-low-energy B ion implants in Si: Evaluation of profile shape and dose accuracy

Cited by 18 publications

References 9 publications

Suppression of uphill diffusion caused by phosphorus deactivation using carbon implantation

Suppression of uphill diffusion caused by phosphorus deactivation using carbon implantation

Secondary Ion Mass Spectrometry

Interface-Mediated Photostimulation Effects on Diffusion and Activation of Boron Implanted into Silicon

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