Simplified sol-gel processing method for amorphous TiOx Memristors

Moreira, Everaldo Nassar; Kendall, Jack D.; Maruyama, Hiraku; Nino, Juan C.

doi:10.1007/s10832-019-00198-z

Cited by 4 publications

(2 citation statements)

References 39 publications

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“…Nassar Moreira et al have fabricated an amorphous TiO x RS device based on the sol−gel process. 218 Abunahla et al have developed TiO 2 memristors by using sol−gel for γ-ray sensing application, 59 and Gergel-Hackett et al have reported a flexible memristor made up of the sol−gel process. 219 4.2.4.…”

Section: Synthesis and Deposition Methods For Rs Devicesmentioning

confidence: 99%

Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

Kamble

Patil

Kamat

et al. 2023

ACS Appl. Electron. Mater.

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In recent years, the emergence of memory devices, especially resistive random-access memories (RRAM), has been a front-runner in many technological applications. This is due to its high-speed operation, structural simplicity, low power consumption, scalability potential, and high-density memory storage features. To develop an efficient and miniaturized memory device based on the resistive switching effect, it is necessary to study the range of materials and their fabrication techniques. In this review article, we have summarized the diverse organic and inorganic materials and their resistive switching performance. Furthermore, we reviewed some potential materials for next-generation resistive switching devices. In the resistive switching device fabrication front, numerous physical, chemical, and biological-based synthesis techniques were briefly reviewed. The influence of preparative parameters was also discussed. Finally, the current status and future directions of this field are discussed. The present review article provides important details of the resistive switching effect, promising organic and inorganic materials, and various fabrication techniques to improve the device's performance for memory applications.

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Section: Synthesis and Deposition Methods For Rs Devicesmentioning

confidence: 99%

Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

Kamble

Patil

Kamat

et al. 2023

ACS Appl. Electron. Mater.

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“…Nevertheless, already some reports use operating voltage below 1 V, opening the path for solution‐based processes. [ 178,199,309,323 ] For example, Chu and co‐workers reported an interesting study of solution‐based WO 3 resistive switching devices with low operating voltage (0.8 V), synaptic plasticity, and learning behavior, being highly promising for neuromorphic computing systems. [ 309 ] Higher operating voltages as selector‐less devices with strong nonlinear characteristics is also not discarded for bioinspiring computation applications.…”

Section: Figures Of Merit and Current Challenges Of S‐rrammentioning

confidence: 99%

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

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Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

Khan,

Rehman,

Iqbal

et al. 2023

ACS Appl. Electron. Mater.

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Due to the fast evolution of information technology, high-speed and scalable memory devices are being investigated for data storage and datadriven computation. Resistive switching random access memory (RRAM) is one of the very popular types of memristors, because of its quick program/erase speed and high density as a result of its simple two-terminal structure, low power consumption, and low cost of fabrication. In this review, the market for promising memristor-based memories for smart systems is examined. The switching memory devices are described and classified according to their I−V behavior to underline the physical switching mechanisms. The various filament mechanisms of the RRAM memristor, including the valence change mechanism (VCM), electrochemical metallization mechanism (ECM), and thermochemical mechanism (TCM), are especially highlighted in various structures. The performance of resistive switching devices with different reported electrode materials and resistive layers is summarized. This study provides a detailed review of materials of the different deposition techniques used for surface modification and coating. The two major areas of interest, physical and chemical vapor deposition techniques and the influence parameter on the resistive switching, are discussed in detail. The prospective applications of RRAM memristors to various fields such as security, neuromorphic computing, and non-volatile logic systems for artificial intelligence are addressed briefly as well as the future outlook.

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Simplified sol-gel processing method for amorphous TiOx Memristors

Cited by 4 publications

References 39 publications

Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

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