Simplified method for the evaluation of the reverse dark current–voltage characteristic of thin film devices

Abstract

An algorithm that simplifies the evaluation of the reverse dark current–voltage (J–V) characteristic of semiconductor thin film devices is presented. This algorithm, recognized with the symbols “0KRDA”, is an approximation of the SRH formalism that can be used when the dangling bond density is modeled with either the Uniform Density Model or with the Defect Pool Model. The 0KRDA is designed to replace the 0K‐Simmons–Taylor approximation (0KSTA) in reversed biased junctions operating under dark conditions. The dependence of the current density J with respect to the applied voltage V predicted with SRH formalism is well replicated by the 0KRDA. The small differences obtained in the calculated reverse dark currents can be removed by neglecting the contribution of gap states with energies closer than kT/5 to the intrinsic trap level. The transport physic controlling the shape of reverse dark J–V curves of thin film devices can be more easily visualized with the 0KRDA.