2022
DOI: 10.1103/physrevapplied.18.034017
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Simple Strategy to Measure the Contact Resistance between Metals and Doped Organic Films

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Cited by 2 publications
(3 citation statements)
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“…This could result in the apparent strong carrier density dependence of mobility, which is somewhat alleviated at higher light intensities when the contact resistance at the respective V OC values are significantly reduced. [89] Nonetheless, we point to a close agreement of the range of PM6:Y6 mobilities extracted using IS with those determined by other methods, including SCLC and RPV. [9,17,111]…”
Section: Photoconductance Mobilitysupporting
confidence: 75%
See 1 more Smart Citation
“…This could result in the apparent strong carrier density dependence of mobility, which is somewhat alleviated at higher light intensities when the contact resistance at the respective V OC values are significantly reduced. [89] Nonetheless, we point to a close agreement of the range of PM6:Y6 mobilities extracted using IS with those determined by other methods, including SCLC and RPV. [9,17,111]…”
Section: Photoconductance Mobilitysupporting
confidence: 75%
“…Firstly, Equation (11) should only be applied to a trap distribution, but a frequency-varying capacitance is not a unique proof. Therefore, the frequency-dependent reduction in capacitance -for instance due to the contact resistance [89] or dielectric relaxation [90] -may be erroneously attributed to a trap distribution. Secondly, in the case of thin devices diffusion of charges from the electrodes into the AL may result in trap filling, making them insensitive to the electric field modulation.…”
Section: Characterization Of Carrier Trappingmentioning
confidence: 99%
“…Figure B) are kept constant to exclude spectral shifts due to a changing optical cavity effect. Second, doped layers ensure both a low injection and transport resistance at reasonable driving conditions as investigated in a recent study from our lab . As a result, much of the applied bias can be expected to drop over the D–A interface at low forward bias, producing a significant extrinsic electric field F ex (cf.…”
Section: Conceptionmentioning
confidence: 99%