The three compounds H3SiCH2NMe2, Me3GeCH2NMe2, and Me3SnCH2NMe2 have been
prepared for the purpose of the determination of their molecular structures. The gas-phase
structure of H3SiCH2NMe2 has been established by electron diffraction (GED) and ab initio
calculations up to the MP2/6-311G** level of theory. The geometry of Me3GeCH2NMe2 could
be studied only by theoretical methods, while the structure of Me3SnCH2NMe2 has been
determined by single-crystal X-ray diffraction (XRD) and computational methods. The
E−C−N units (E = Si, Ge, Sn) in all three compounds adopt angles that are larger than the
tetrahedral angle (H3SiCH2NMe2 GED 114.7(3)°, MP2/6-311G** 111.4°; Me3GeCH2NMe2
SCF/6-31G* 116.1°; Me3SnCH2NMe2 XRD 113.0(2)°, SCF/dzp 115.4°), and all three compounds adopt gauche conformations; that is, the lone pairs at nitrogen are declined away
from the plane E−C−N. These facts are interpreted in terms of the absence of an earlier
postulated α-effect, which should lead to an attractive interaction between E and N centers.
The structures, energies, and orbital interactions in the natural bond orbital (NBO) model
for three possible conformations of the SiCH2NC2 skeleton (lone pairs at N vs Si atom) of
H3SiCH2NMe2 have been calculated ab initio and show the gauche conformer to be the ground
state and the syn form (+6.6 kJ mol-1) as well as the anti form (+10.2 kJ mol-1) to be
transition states to rotation about the N−C(H2) bond. The NBO calculations do not confirm
the earlier postulated lp(N) → d(E), σ(NC) → d(E), or lp(N) → σ*(EX) interactions as important
contributors to electron delocalization. Calculations on the model system FH2SiCH2NMe2
predict a tendency of SiCN units to adopt small bond angles if very electronegative groups
are bound to silicon. The conformational preferences of the unsubstituted H3SiCH2NMe2
are overridden in favor of a conformation bringing the lone pair of electrons closer to the
electrophilic Si center. This compound is predicted to have significant lp(N) → σ*(SiF)
interactions.