Simple and Convenient Interface Modification by Nanosized Diamond for Carbon Based All-Inorganic CsPbIBr₂ Solar Cells

Abstract

In this work, a simple and convenient interface modification by nanosized diamond (ND) was used in the carbon based all-inorganic CsPbIBr 2 planar perovskite solar cells (PSCs). Only by spin-coating ND particles on the crystallized perovskite without further treatment did all CsPbIBr 2 PSCs achieve an overall improvement in photovoltaic performance. The champion PCE of ND modified PSC reached 9.07%, 22% higher than the control device (7.46%), and remained at 86% of its original value after 50 days. Particularly, the device obtained a V OC beyond 1.30 V and FF over 60% at the same time, which is superior to most of the reported CsPbIBr 2 PSCs. The results of light absorption, PL spectra, TPC, TPV, and electrochemical analysis revealed that the superior device performance mainly came from the improved light absorption and reduced carrier recombination in PSCs. Therefore, the ND provides a facile strategy to enhance the performance of CsPbIBr 2 PSCs.

Efficient and Stable All‐Inorganic CsPbIBr2 Perovskite Solar Cells Enabled by Dynamic Vacuum‐Assisted Low‐Temperature Engineering

“…[ 49,51 ] Meanwhile, the dependence of J sc on illumination intensity ( P light ) of VALT‐CsPbIBr 2 PSCs presents a larger α (0.982) than that of HT‐CsPbIBr 2 ones ( α = 0.969, Figure 4b), where the larger α closer to unity revealing a perfecter charge extraction existing in the former. [ 47 ] The better charge extraction behavior of VALT‐CsPbIBr 2 PSCs correlates with the smaller series resistance and larger recombination resistance determined from the electrochemical impedance spectra versus that of HT‐CsPbIBr 2 (Figure S11, Supporting Information). Accordingly, the favorable charge extraction would be conducive to suppressing the bimolecular charge recombination and then improving the efficiency of derived devices.…”

“…Meanwhile, the deeper CBM of VALT-CsPbIBr 2 would reduce the electron transfer energy loss, which is beneficial for enhancing the efficiency of derived devices. [45][46][47] In addition, the Fermi level (E F ) could be calculated according to E F ¼ 21.22 À E cutoff , which corresponds to À4.04 and À4.62 eV for HT-CsPbIBr 2 and VALT-CsPbIBr 2 (Figure S7, Supporting Information), respectively. The deeper E F of VALT-CsPbIBr 2 far away from its CBM not only agrees well with its larger work function but also confirms its weaker n-type doping feature once again.…”

Recent Progress of Carbon‐Based Inorganic Perovskite Solar Cells: From Efficiency to Stability

“…), 2D nanomaterials (e.g., graphene oxide (GO), [303] (NiCo) 1-y Fe y O x nanoparticles decorated GO (NP-GO), [336] rhenium disulfide (ReSe 2 ), [122] etc.) CuSCN, [30,31] Co 3 O 4 , [43] 1-butyl-3-methylimidazolium tetrafluoroborate (BMIMBF 4 ), [337] nanosized diamond (ND), [338] MnS, [128] Cu(Cr,M)O 2 (M = Ba 2+ , Ca 2+ , or Ni 2+ ) NCs, [339] CsPbBr x I 3-x NCs, [340] and MoO 2 /N-doped carbon nanospheres, [341] Cs 2 SnI 6 , [342] 2-bromonaphthalene (BN), [343] choline bromide, [344] and so on.…”

Hole transport free carbon-based high thermal stability CsPbI1.2Br1.8 solar cells with an amorphous InGaZnO4 electron transport layer

“…The HTL free design avoids the use of complex organic hole transport materials, and the carbon electrodes prepared using a screen printing method have a stable performance under baking. 46 With its unique amorphous structure, the a-IGZO thin film will not deteriorate its uniformity and electrical properties due to the influence of temperature on the lattice gap. 53 For the phenomenon that the device performance is slightly improved during the long-term annealing process, we make the following explanation: for all-inorganic perovskites, long-time baking may improve the device performance in two aspects, one is to improve the quality of the film, the other is to optimize the interface contact.…”

“…In 2020, for example, devices based on compact TiO 2 (c-TiO 2 ) ETLs usually showed a PCE in the range of 6.55% to 8.60%. [44][45][46][47] The more complex c-TiO 2 /mesoporous TiO 2 (m-TiO 2 ) double layer ETL also show a similar PCE up to 8.25%. 48,49 While the modification of the c-TiO 2 /CsPbIBr 2 heterojunction interface using CsBr clusters can improve the PCE to 10.71%.…”