Silver oxide Schottky contacts and metal semiconductor field-effect transistors on SnO₂ thin films

Abstract

Silver oxide Schottky contacts (SCs), reactively sputtered using a low-power Ar:O2 rf-plasma on SnO2 films grown by mist-CVD, showed significantly improved figures-of-merit compared with plain-metal SCs, with barrier heights of 0.91 eV and ideality factors close to unity. These SCs were used to fabricate thin-film metal-semiconductor FETs with on/off ratios >106 on the same solution-processed material. It is proposed that the high quality of these SCs is due to the oxidized fabrication methodology, whereby reactive oxygen species are likely to be present during the formation of the Schottky interface, leading to the removal of the native surface electron accumulation layer.

Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc–Tin–Oxide with Various Cation Compositions

“…Additionally, the barrier height is similar for similar compositions, as can be seen for the overlapping regions between the individual thin films. The effective barrier height exhibits a linear dependence on the ideality factor for high zinc contents in the thin films (Figure b) as also observed for Schottky barrier diodes on zinc oxide, tin oxide, and silicon. ,− For low zinc contents, the effective barrier height is constant and exhibits a weak dependence on the ideality factor.…”

Bidirectional Control of the Band Bending at the (2̅01) and (010) Surfaces of β-Ga2O3 Using Aryldiazonium Ion and Phosphonic Acid Grafting

“…This observation is attributed to a larger electrostatic barrier at the β-Ga 2 O 3 –electrolyte interface, which necessitates a larger negative overpotential for significant current flow, compared to other TSOs. A related effect has been observed in metal–semiconductor (MS) Schottky contacts (SCs) to β-Ga 2 O 3 ; these have significantly larger electrostatic barriers compared to SCs on ZnO, SnO 2 , and In 2 O 3 . − The more-negative reduction peak potential for NBD at the (010) compared to the (2̅01) substrate (Figure ) is also consistent with the larger SC barrier heights reported at (010) compared to (2̅01) β-Ga 2 O 3 surfaces. , …”

Electroformed, Self‐Connected Tin Oxide Nanoparticle Networks for Electronic Reservoir Computing

“…Surface hydroxyl attachment onto SnO x has been studied by numerous authors and resulting increased electrical conductivity has been attributed to the formation of surface electron accumulation layers. [12,13] These electron layers enhance adsorption at the surface, leading to environmentally-sensitive electronic properties. Figure 4a 4d).…”

“…networks remain susceptible to non-volatile switching (and hence violation of the echo state property) [9] and sensitive to their environment. [10] Tin oxide is a low-cost semiconducting material with proven applications including high performance transparent field effect transistors [11,12] , gas sensors [13] and, recently, resistive switching devices. [14][15][16] In addition to non-volatile resistive switching which has been attributed to electromigration of oxygen vacancies [14] , the conductivity of SnO x can also be widely modulated by Joule heating.…”