Silver-Nanowire-Embedded Transparent Metal-Oxide Heterojunction Schottky Photodetector

Abstract

We report a self-biased and transparent CuO/TiO heterojunction for ultraviolet photodetection. The dynamic photoresponse improved 8.5 × 10% by adding silver nanowires (AgNWs) Schottky contact and maintaining 39% transparency. The current density-voltage characteristics revealed a strong interfacial electric field, responsible for zero-bias operation. In addition, the dynamic photoresponse measurement endorsed the effective holes collection by embedded-AgNWs network, leading to fast rise and fall time of 0.439 and 0.423 ms, respectively. Similarly, a drastic improvement in responsivity and detectivity of 187.5 mAW and of 5.13 × 10 Jones, is observed, respectively. The AgNWs employed as contact electrode can ensure high-performance for transparent and flexible optoelectronic applications.

Translucent Photodetector with Blended Nanowires–Metal Oxide Transparent Selective Electrode Utilizing Photovoltaic and Pyro‐Phototronic Coupling Effect

“…After substituting all required parameters such as an FWHM of 0.531, a crystalline size of 17 nm was calculated. The XRD analysis for the as‐deposited Cu 4 O 3 layer can be found in our recent article, which related well to the other reported literature …”

“…The device had a small photocurrent of 40 nA, which could be due to the absence of a top electrode. Therefore, the selective contact electrodes were introduced, which were supposed to effectively collect the photogenerated electron–hole pairs, before their recombination, and resulted in an improved performance . With experimentation, we collected similar results as shown in Figure c.…”

“…The electrical characteristics of the device with the selective contact electrodes are shown in Figure . The simple device, e.g., Cu 4 O 3 /ZnO/FTO/Glass, responded well to a UV illumination of 4.5 mW cm −2 with a photoresponse line (shown by the red line) shifting toward lower resistance (higher photocurrent) space in the I–V curve (Figure a).The fabricated device was self‐biased, which is evidenced by an open circuit voltage ( V oc ) of 96 mV, as clearly visible in the semi‐logarithmic scale of the light current line shifting away from the dark line in the voltage scale of the I–V curve (Figure b) . The device had a small photocurrent of 40 nA, which could be due to the absence of a top electrode.…”

“…PLAgNW50‐IP‐25m), in solution (S32IKNS6A7) via micropipette (Witeg DEM 15‐Germany) and subsequently spinning at a rotation of 3000 rpm for 30 s on a spin coater (spin coater EF‐4op). The AgNWs were bought from PlasmaChem GmbH (Berlin, Germany) …”

“…PDs with a transparent and self-biased nature. [1][2][3][8][9][10][11][12][13] Generally, PDs govern by the separation of photogenerated electron-hole pairs under the action of an electric field, which may be either built-in or externally supplied. [2,3] Usually, the material's workfunction offset creates an interfacial built-in potential, which separates the photogenerated charge carriers on its own.…”