2013
DOI: 10.1016/j.jallcom.2013.05.125
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Silver-insertion induced improvements in dielectric characteristics of the Hf-based film

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Cited by 8 publications
(2 citation statements)
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“…The space charge accumulated inside the medium is affected by factors such as charge source, migration, sinking, and collapse. In general, two tunneling mechanisms are focused: the Fowler-Nordheim and Schottky mechanism [30]. Since this article is tested under 10 kV/mm and 20 kV/mm, the charge mainly comes from the Schottky effect.…”
Section: Space Chargementioning
confidence: 99%
“…The space charge accumulated inside the medium is affected by factors such as charge source, migration, sinking, and collapse. In general, two tunneling mechanisms are focused: the Fowler-Nordheim and Schottky mechanism [30]. Since this article is tested under 10 kV/mm and 20 kV/mm, the charge mainly comes from the Schottky effect.…”
Section: Space Chargementioning
confidence: 99%
“…Our previous study illustrated that samples without the oxygen annealing process generated an only 0.8 nm interfacial layer. 36,40 This gives evidence that the formation of the 1.2 nm thick undesirable interfacial layer is governed by the annealing process.…”
Section: Resultsmentioning
confidence: 89%