Abstract:The structure of Ag-doped GeS3 glasses (0,15,20,25 at.% Ag) was investigated by diffraction techniques and extended X-ray absorption fine structure measurements. Structural models were obtained by fitting the experimental datasets simultaneously by the reverse Monte Carlo simulation technique. It is observed that Ge has mostly S neighbours in GeS3, but Ge-Ge bonds appear already at 15% Ag content. Sulphur has ~2 S/Ge neighbours over the whole concentration range, while the S-Ag coordination number increases wi… Show more
“…There are interesting differences between the results for Ag-GeS 3 [21] and those found here for compounds with a higher Ge:S ratio. The higher S content in the former means that S-S bonds are significant for all Ag concentrations investigated.…”
Section: Discussioncontrasting
confidence: 99%
“…The coordination numbers characterizing the host covalent network (e.g. Ge-Ge, Ge-S, S-S) do not depend on the composition between 15-25% Ag content (table 3 of [21]), suggesting that Ag occupies the free volume of the covalent network without breaking it, as found in the present work. However, a strong network rearrangement for Ag content below 15% is manifest in the formation of Ge-Ge bonds.…”
Section: Discussionsupporting
confidence: 78%
“…XRD and ND studies of Ge x S 1−x alloys with 0.333 ≤ x ≤ 0.467, sometimes termed as "Ge-rich" because they have a larger Ge/S ratio than in GeS 2 , showed different structural patterns from those found in GeS 2 [20]. Rátkai et al [21] have performed a reverse Monte Carlo analysis of XRD, ND, and EXAFS data on GeS 3 doped with up to 25 at. % Ag.…”
Section: Introductionmentioning
confidence: 99%
“…XRD and ND studies of Ge x S 1−x alloys with ⩽ ⩽ x 0.333 0.467, sometimes termed as 'Ge-rich' because they have a larger Ge/S ratio than in GeS 2 , showed different structural patterns from those found in GeS 2 [20]. Rátkai et al [21] have performed a reverse Monte Carlo analysis of XRD, ND, and EXAFS data on GeS 3 doped with up to 25 at.% Ag. Ge has mainly S neighbours in GeS 3 , but Ge-Ge and Ag-Ag bonds appear already in (GeS 3 ) 0.85 -Ag 0.15 , and the S-Ag coordination number increases with increasing Ag content.…”
Density functional/molecular dynamics simulations have been performed to determine structural and other properties of amorphous Ag/Ge/S and Ge/S alloys. In the former, the calculations have been combined with experimental data (x-ray and neutron diffraction, extended x-ray absorption fine structure). Ag/Ge/As alloys have high ionic conductivity and are among the most promising candidates for future memristor technology. We find excellent agreement between the experimental results and large-scale (500 atoms) simulations in Ag/Ge/S, and we compare and contrast the structures of Ge/S and Ag/Ge/S. The calculated electronic structures, vibrational densities of states, ionic mobilities, and cavity distributions of the amorphous materials are discussed and compared with data on crystalline phases where available. The high mobility of Ag in solid state electrolyte applications is related to the presence of cavities and can occur via jumps to a neighbouring vacant site.
“…There are interesting differences between the results for Ag-GeS 3 [21] and those found here for compounds with a higher Ge:S ratio. The higher S content in the former means that S-S bonds are significant for all Ag concentrations investigated.…”
Section: Discussioncontrasting
confidence: 99%
“…The coordination numbers characterizing the host covalent network (e.g. Ge-Ge, Ge-S, S-S) do not depend on the composition between 15-25% Ag content (table 3 of [21]), suggesting that Ag occupies the free volume of the covalent network without breaking it, as found in the present work. However, a strong network rearrangement for Ag content below 15% is manifest in the formation of Ge-Ge bonds.…”
Section: Discussionsupporting
confidence: 78%
“…XRD and ND studies of Ge x S 1−x alloys with 0.333 ≤ x ≤ 0.467, sometimes termed as "Ge-rich" because they have a larger Ge/S ratio than in GeS 2 , showed different structural patterns from those found in GeS 2 [20]. Rátkai et al [21] have performed a reverse Monte Carlo analysis of XRD, ND, and EXAFS data on GeS 3 doped with up to 25 at. % Ag.…”
Section: Introductionmentioning
confidence: 99%
“…XRD and ND studies of Ge x S 1−x alloys with ⩽ ⩽ x 0.333 0.467, sometimes termed as 'Ge-rich' because they have a larger Ge/S ratio than in GeS 2 , showed different structural patterns from those found in GeS 2 [20]. Rátkai et al [21] have performed a reverse Monte Carlo analysis of XRD, ND, and EXAFS data on GeS 3 doped with up to 25 at.% Ag. Ge has mainly S neighbours in GeS 3 , but Ge-Ge and Ag-Ag bonds appear already in (GeS 3 ) 0.85 -Ag 0.15 , and the S-Ag coordination number increases with increasing Ag content.…”
Density functional/molecular dynamics simulations have been performed to determine structural and other properties of amorphous Ag/Ge/S and Ge/S alloys. In the former, the calculations have been combined with experimental data (x-ray and neutron diffraction, extended x-ray absorption fine structure). Ag/Ge/As alloys have high ionic conductivity and are among the most promising candidates for future memristor technology. We find excellent agreement between the experimental results and large-scale (500 atoms) simulations in Ag/Ge/S, and we compare and contrast the structures of Ge/S and Ag/Ge/S. The calculated electronic structures, vibrational densities of states, ionic mobilities, and cavity distributions of the amorphous materials are discussed and compared with data on crystalline phases where available. The high mobility of Ag in solid state electrolyte applications is related to the presence of cavities and can occur via jumps to a neighbouring vacant site.
“…The strong signal in the low‐ Q region of the Ge–Te correlation indicates a strong Ge–Te background network. Such a network is typical for glasses with a large portion of Ge–chalcogenide bonds, e.g., Ge–Se or Ge–S glasses or the Ge–Cu–Te system (). This network is formed mainly by connected GeX 4 building blocks (X = chalcogenide).…”
We have investigated amorphous GeTe by anomalous X‐ray scattering coupled with reverse Monte Carlo modeling. Experiments were conducted at the two K‐absorption edges in order to determine differential structure factors for both elements. The results indicate that simple models like the 8−N bonding rule cannot accurately rationalize the atomic structure. Te atoms are found to be over‐coordinated with a mean coordination number of about 2.5. Moreover, evidence is given for a high level of intermediate‐range order based on Ge, which has not been reported previously. This order has a pronounced effect on the ring statistics observed in the amorphous network, and thereby on the phase‐change speed of GeTe.
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