Siloxane-Based Capping Layers for Al2O3 as Silicon-Nitride Replacement in Industrial-Type PERC Solar Cells

Schmidt, J.; Kärkkäinen, Anu; Leivo, Jarkko; Williams, Phillip; Hadzic, A.; Chen, N.; Hannu-Kuure, Milja; Wang, J.; Veith‐Wolf, Boris

doi:10.4229/eupvsec20142014-2do.2.2

Cited by 1 publication

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“…Moreover, in order to improve the current density, the suppression of the surface optical reflection with a stacking structure such as SiN=Al 2 O 3 has received much attention in attempts to achieve a highly efficient cell. [7][8][9][10][11] The advanced passivation layer for p-type Si is desired to have high-density negative fixed charges, which can induce effective field effect passivation. We have investigated the 15% Y 2 O 3 -85% ZrO 2 composite film (YZO) with respect to field effect passivation and found a significantly high negative fixed charge density.…”

Section: Introductionmentioning

confidence: 99%

Investigation of new stacking surface passivation structures with interfacial tuning layers on p-type crystalline silicon

Ikeno

Katsumata

Yoshida

et al. 2016

Jpn. J. Appl. Phys.

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We fabricated a Y2O3–ZrO2 film (YZO) on Al2O3 to achieve the field effect passivation with high negative fixed charge densities on p-type Si. The surface recombination velocity was improved down to 30 cm/s after annealing at 400 °C. This improvement can be attributed to the effective fixed charge enhancement while the interface state densities were kept almost constant. A high thermal tolerance of over 600 °C upon inserting a 2-nm-thick ZrO2 layer between the YZO and Al2O3 interface was confirmed. This result showed that the ZrO2 layer acts as a protective barrier to prevent Al and Y interdiffusions. Annealing at a higher temperature of 800 °C resulted in interface degradation and YZO crystallization, which led to the deterioration of the passivation properties.

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Section: Introductionmentioning

confidence: 99%