Silicon waveguide optical switch with embedded phase change material

Miller, Kevin; Hallman, Kent A.; Haglund, Richard F.; Weiss, Sharon M.

doi:10.1364/oe.25.026527

Cited by 87 publications

(46 citation statements)

References 26 publications

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“…[ 17,18 ] For a number of years, integrated phase‐change devices have been put forward as a promising solution, with Ge 2 Sb 2 Te 5 (GST) being the most commonly used material. Optical modulators, [ 19–24 ] optical memory, [ 25–27 ] programmable metasurfaces, [ 28,29 ] beam steering, [ 30 ] nonlinear harmonic generation, [ 31 ] and Mach–Zehnder interferometers [ 32 ] have all been demonstrated using guided modes coupled to an active layer of GST. The emphasis on GST as a phase‐change material (PCM) is a result of its wide availability and the established technology, the relatively low switching temperature, which enables microheaters to be used [ 11 ] and the very large refractive index shift Δ n = 3.56 at a wavelength of 1550 nm that can be achieved by switching phase.…”

Section: Introductionmentioning

confidence: 99%

A New Family of Ultralow Loss Reversible Phase‐Change Materials for Photonic Integrated Circuits: Sb₂S₃ and Sb₂Se₃

Delaney

Zeimpekis

Lawson

et al. 2020

Adv Funct Materials

363

246

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Phase‐change materials (PCMs) are seeing tremendous interest for their use in reconfigurable photonic devices; however, the most common PCMs exhibit a large absorption loss in one or both states. Here, Sb2S3 and Sb2Se3 are demonstrated as a class of low loss, reversible alternatives to the standard commercially available chalcogenide PCMs. A contrast of refractive index of Δn = 0.60 for Sb2S3 and Δn = 0.77 for Sb2Se3 is reported, while maintaining very low losses (k < 10−5) in the telecommunications C‐band at 1550 nm. With a stronger absorption in the visible spectrum, Sb2Se3 allows for reversible optical switching using conventional visible wavelength lasers. Here, a stable switching endurance of better than 4000 cycles is demonstrated. To deal with the essentially zero intrinsic absorption losses, a new figure of merit (FOM) is introduced taking into account the measured waveguide losses when integrating these materials onto a standard silicon photonics platform. The FOM of 29 rad phase shift per dB of loss for Sb2Se3 outperforms Ge2Sb2Te5 by two orders of magnitude and paves the way for on‐chip programmable phase control. These truly low‐loss switchable materials open up new directions in programmable integrated photonic circuits, switchable metasurfaces, and nanophotonic devices.

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Section: Introductionmentioning

confidence: 99%

A New Family of Ultralow Loss Reversible Phase‐Change Materials for Photonic Integrated Circuits: Sb₂S₃ and Sb₂Se₃

Delaney

Zeimpekis

Lawson

et al. 2020

Adv Funct Materials

363

246

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“…In addition to the electrical resistance contrast, a pronounced change in the optical property, including refractive index, extinction coefficient, and reflectance, also occurs in PCMs during the phase transition [14,15]. Such features have led to the development of on-chip non-volatile photonic applications, such as nanopixel display [16,17], photonic synapse [18,19], optical computing [20], and optical switching [21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Miniature Multilevel Optical Memristive Switch Using Phase Change Material

et al. 2019

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The optical memristive switches are electrically activated optical switches that can memorize the current state. They can be used as optical latching switches in which the switching state is changed only by applying an electrical Write/Erase pulse and maintained without external power supply.We demonstrate an optical memristive switch based on a silicon MMI structure covered with nanoscale-size Ge2Sb2Te5 (GST) material on top. The phase change of GST is triggered by resistive heating of the silicon layer beneath GST with an electrical pulse. Experimental results reveal that the optical transmissivity can be tuned in a controllable and repeatable manner with the maximum transmission contrast exceeding 20 dB. Partial crystallization of GST is obtained by controlling the width and amplitude of the electric pulses. Crucially, we also demonstrate that both Erase and Write operations, to and from any intermediate level, are possible with accurate control of the electrical pulses. Our work marks a significant step forward towards realizing photonic memristive switches without static power consumption, which are highly demanded in highdensity large-scale integrated photonics.

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“…These materials undergo an insulatormetal transition (IMT) accompanied by a crystal phase transition (CPT) when their temperature is raised above an IMT temperature [6,7]. Upon undergoing an IMT, the optical properties of such materials also change drastically, and this has enabled many groups to demonstrate high-performance electro-optic [8,9] and thermo-optic [10] modulators with nanoscale sizes.…”

Section: Introductionmentioning

confidence: 99%

Thresholdless behavior and linearity of the optically induced metallization of NbO2

Clark

Matsui

et al. 2019

Phys. Rev. Research

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The optical excitation of NbO 2 is known to induce a transient metallicity that partially recovers on a subpicosecond speed and only fully recovers after several nanoseconds. Here, through low-fluence pump-probe spectroscopy, the short-lived and long-lived components of NbO 2 's optically induced modulation are found to be linearly dependent on pump fluence in the low-fluence regime. Through an in-depth analysis, the short-lived and long-lived modulations are found to be caused by photocarrier-induced refractive index changes and photothermally induced changes in the lattice temperature of NbO 2 , respectively, and not an insulator-metal transition.

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Silicon waveguide optical switch with embedded phase change material

Cited by 87 publications

References 26 publications

A New Family of Ultralow Loss Reversible Phase‐Change Materials for Photonic Integrated Circuits: Sb₂S₃ and Sb₂Se₃

A New Family of Ultralow Loss Reversible Phase‐Change Materials for Photonic Integrated Circuits: Sb₂S₃ and Sb₂Se₃

Miniature Multilevel Optical Memristive Switch Using Phase Change Material

Thresholdless behavior and linearity of the optically induced metallization of NbO2

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Silicon waveguide optical switch with embedded phase change material

Cited by 87 publications

References 26 publications

A New Family of Ultralow Loss Reversible Phase‐Change Materials for Photonic Integrated Circuits: Sb2S3 and Sb2Se3

A New Family of Ultralow Loss Reversible Phase‐Change Materials for Photonic Integrated Circuits: Sb2S3 and Sb2Se3

Miniature Multilevel Optical Memristive Switch Using Phase Change Material

Thresholdless behavior and linearity of the optically induced metallization of NbO2

Contact Info

Product

Resources

About

A New Family of Ultralow Loss Reversible Phase‐Change Materials for Photonic Integrated Circuits: Sb₂S₃ and Sb₂Se₃

A New Family of Ultralow Loss Reversible Phase‐Change Materials for Photonic Integrated Circuits: Sb₂S₃ and Sb₂Se₃