Silicon Wafers

Tilli, Markku

doi:10.1016/b978-0-8155-1594-4.00005-x

Cited by 14 publications

(20 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The work focused on nonsymmetrical outlets (see figure 4) but also provided an approximation for symmetrical outlets [13,15]: Equation ( 11) is in better agreement with the relative elongation for a symmetrical outlet considering the continuum flow regime, known to be 8/(3π ) ≈ 0.8488, and the expected inferior dependence on rarefaction in comparison to a nonsymmetrical outlet [13,16], hence it will be adopted in this study.…”

Section: Border Effectsmentioning

confidence: 93%

“…Veijola et al (2005) derived the surface elongations for a parallel-plate configuration with linear movement, including rarefaction effects, by extracting the elongations from FEM simulation results. The resulting approximation for the elongated plate width with nonsymmetrical outlets is valid up to K n < 0.1 [13,15]:…”

Section: Border Effectsmentioning

confidence: 98%

“…for slip regime 0.001 < K n < 0.1 [13][14][15]; where σ p is the slip coefficient [16] (σ p = 1.016 for diffuse scattering) and K n is the Knudsen number. For gases, the Knudsen number relates the gas-specific mean free path (λ) and the film thickness, K n = λ d .…”

Section: Analytic Model With Rarefaction and Compressibility Effectsmentioning

confidence: 99%

“…The relative flow rate coefficient is a compact way to include the boundary effects of rarified gas and these approximations are valid in the specific flow regimes mentioned (transitional and slip flow regimes, respectively). The resulting solution for the total damping force in rectangular parallel-plates includes a component in-phase with the velocity (G m,n ) and an out-ofphase component (C m,n ) expressed as [10,15,17]…”

Section: Analytic Model With Rarefaction and Compressibility Effectsmentioning

confidence: 99%

See 3 more Smart Citations

Improving capacitance/damping ratio in a capacitive MEMS transducer

Dias¹,

Rocha²

2013

J. Micromech. Microeng.

View full text Add to dashboard Cite

Damping forces play an important role in capacitive MEMS (microelectromechanical systems) behavior, and typical damper design (parallel-plates) cannot address the design conflict between increase in electrical capacitance and damping reduction. Squeeze-film damping in in-plane parallel-plate MEMS is discussed here and a novel damper geometry for gap-varying parallel-plates is introduced and used to increase the capacitance/damping ratio. The new geometry is compared with a typical parallel-plate design for an silicon-on-insulator process (25 μm thick) and experimental data shows an approximate 25% to 50% reduction for the damping coefficient in structures with 500 μm long dampers (for a gap variation between 0.75 and 3.75 μm), in agreement with computational fluid dynamics simulations, without significantly affecting the capacitance value (∼4% reduction). Preliminary simulations to study the role of the different geometric parameters involved in the improved geometry are also performed and reveal that the channel width is the most critical value for effective damping reduction.

show abstract

Section: Border Effectsmentioning

confidence: 93%

Section: Border Effectsmentioning

confidence: 98%

Section: Analytic Model With Rarefaction and Compressibility Effectsmentioning

confidence: 99%

Section: Analytic Model With Rarefaction and Compressibility Effectsmentioning

confidence: 99%

See 2 more Smart Citations

Improving capacitance/damping ratio in a capacitive MEMS transducer

Dias¹,

Rocha²

2013

J. Micromech. Microeng.

View full text Add to dashboard Cite

show abstract

“…Bulk micromachining is a set of processes that enable threedimensional (3D) sculpting of various materials to make micro structures that are the basic parts of microelectromechanical systems (MEMS). Among them, micromachining of the silicon substrate by wet anisotropic etching plays an important role [1]. Bulk silicon micromachining builds mechanical elements by etching away the unwanted parts of a single crystalline silicon substrate.…”

Section: Introductionmentioning

confidence: 99%

Simulation and experimental study of maskless convex corner compensation in TMAH water solution

Smiljanić¹,

Radjenović²,

Radmilović-Radjenović³

et al. 2014

J. Micromech. Microeng.

View full text Add to dashboard Cite

Maskless etching with convex corner compensation in the form of a ⟨1 0 0⟩ oriented beam is investigated using both experiments and simulations. The maskless convex corner compensation technique is defined as a combination of masked and maskless anisotropic etching of {1 0 0} silicon in 25 wt% TMAH water solution at a temperature of 80 °C. This technique enables fabrication of three-level micromachined silicon structures with compensated convex corners at the bottom of the etched structure. All crystallographic planes that appear during etching are determined and their etch rates are used to calculate the etch rate value in an arbitrary crystallographic direction necessary for simulation by an interpolation procedure. A 3D simulation of the profile evolution of the etched structure during masked and maskless etching of silicon based on the level set method is presented. All crystallographic planes of the etched silicon structures determined in the experiment are recognized in the corresponding simulated etching profiles obtained by the level set method.

show abstract