Silicon Vertically Integrated Nanowire Field Effect Transistors

Abstract

Silicon nanowires have received considerable attention as transistor components because they represent a facile route toward sub-100-nm single-crystalline Si features. Herein we demonstrate the direct vertical integration of Si nanowire arrays into surrounding gate field effect transistors without the need for postgrowth nanowire assembly processes. The device fabrication allows Si nanowire channel diameters to be readily reduced to the 5-nm regime. These first-generation vertically integrated nanowire field effect transistors (VINFETs) exhibit electronic properties that are comparable to other horizontal nanowire field effect transistors (FETs) and may, with further optimization, compete with advanced solid-state nanoelectronic devices.

Deformation Potentials and Electron−Phonon Coupling in Silicon Nanowires

“…Silicon nanowires, beyond having been successfully demonstrated as conventional semiconductor devices, [1][2][3][4] are beginning to be seen as the important blocks for novel energy harvesting applications, such as solar cells 5,6 and efficient thermoelectric devices. 7,8 All these applications rely on a high electronic conductivity of electrons, while in the latter a low phonon conductivity is also essential.…”

Gate bias-dependent junction characteristics of silicon nanowires suspended between polysilicon electrodes

“…Islam et al successfully created a Si nanobridge between two vertically arranged Si surfaces using a wet etching process [3,6]. Goldberge et al recorded ohmic I-V curves from a similar SiNW bridge using tungsten probes, but did not perform more detailed measurements such as gate voltage dependence [15]. They used colloidal gold as the catalyst for the growth of the SiNWs and could not grow the nanowires at predetermined sites or prepare FETs out of them [15].…”

Performance Analysis of a Ge/Si Core/Shell Nanowire Field-Effect Transistor

“…nanowire, we assume an unrelaxed nanowire atomic geometry with bulk atomic positions and construct the Hamiltonian of the nanowire unit cell using the orthogonal-basis sp 3 d 5 s* tight-binding method developed for bulk electronic structure 11 . Each atom is modeled using 10 orbitals per atom per spin (20 orbitals per atom total).…”

“…Each atom is modeled using 10 orbitals per atom per spin (20 orbitals per atom total). The nanowire is assumed to be infinitely long, and the nanowire surface is taken to be passivated by hydrogen atoms, which is treated numerically using a hydrogen termination model of the sp 3 hybridized interface atoms 12 . This technique has been reported to successfully remove all the interface states from the band gap 12 .…”