Silicon versus germanium in picosecond logic circuits

Hill, Frances A.; Farber, A.S.; Yu, Hyn Kyu

doi:10.1109/isscc.1967.1154543

Cited by 4 publications

(1 citation statement)

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“…It is therefore necessary for rf and millimetre wave integrated circuits (MMICs) to investigate the fabrication of bipolar transistors in germanium. The original germanium transistors employed alloy junctions, [6,7] but such technology is unlikely to give the dimension control required for current devices. It is therefore essential to investigate the manufacture of Ge BJTs using process steps normally employed in a silicon foundry.…”

Section: Introductionmentioning

confidence: 99%

Design, Manufacture and Performance of Germanium Bipolar Transistors

Li¹,

Gamble²,

Armstrong³

et al. 2010

ECS Trans.

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Abstract-Germanium NPN bipolar transistors have been manufactured using phosphorus and boron ion implantation processes. Implantation and subsequent activation processes have been investigated for both dopants. Full activation of phosphorus implants has been achieved with RTA schedules at 535°C without significant junction diffusion. However, boron implant activation was limited and diffusion from a polysilicon source was not practical for base contact formation. Transistors with good output characteristics were achieved with an Early voltage of 55V and common emitter current gain of 30. Both Silvaco process and device simulation tools have been successfully adapted to model the Ge BJT(bipolar junction transistor) performance.

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Section: Introductionmentioning

confidence: 99%