Silicon vacancy in SiC as a promising quantum system for single-defect and single-photon spectroscopy

Баранов, П. Г.; Bundakova, A. P.; Soltamova, Alexandra A.; Orlinskiĭ, S. B.; Borovykh, I. V.; Zondervan, Rob; Verberk, R.; Schmidt, Jan

doi:10.1103/physrevb.83.125203

Cited by 216 publications

(230 citation statements)

References 43 publications

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“…More recently, ensemble emitters with spin dephasing times in the order of microseconds and room-temperature optically detectable magnetic resonance (ODMR) have been identified in silicon carbide (SiC) [10][11][12] , a compound being highly compatible to up-to-date semiconductor device technology. Until recently, however, the engineering of such spin centres in SiC on the single-emitter level has remained elusive 13 .…”

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confidence: 99%

Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

et al. 2015

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Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption crosssection, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.

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confidence: 99%

Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

et al. 2015

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“…Recently, intrinsic defects in silicon carbide (SiC) have been proposed as eligible candidates for qubits [7,8]. Indeed, they reveal quantum spin coherence even at room temperature [9][10][11].…”

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“…The energy diagrams describing the optical transitions, the spin pumping scheme and the related RF transitions with respect to the multiplicity of the ground state are discussed in [21]. In case of the silicon vacancy, two ESR lines should appear for each V Si site at magnetic fields B − and B + [8,21]. If the external magnetic field is applied parallel to the c axis of 6H-SiC, there is the following interconnection between B ± , ν ESR and ∆…”

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Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide

Riedel¹,

Fuchs²,

Kraus³

et al. 2012

Phys. Rev. Lett.

173

154

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Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nature Mat. 9, 468 (2010)]. We report that silicon vacancy defects in silicon carbide comprise the technological advantages of semiconductor quantum dots and the unique spin properties of the nitrogen-vacancy defects in diamond. Similar to atoms, the silicon vacancy qubits can be controlled under the double radio-optical resonance conditions, allowing for their selective addressing and manipulation. Furthermore, we reveal their long spin memory using pulsed magnetic resonance technique. All these results make silicon vacancy defects in silicon carbide very attractive for quantum applications.PACS numbers: 61.72. Hh, 76.70.Hb, 61.72.jd The double radio-optical resonance in atoms [1] constitutes the basis for a unprecedented level of coherent quantum control. Atomic time standards [2] and multiqubit quantum logic gates [3] are among the most known examples. In the solid state, semiconductor quantum dots (QDs) and the nitrogen-vacancy (NV) defects in diamond, frequently referred to as artificial atoms, are considered as the most promising candidates for quantum information processing [4,5]. Nevertheless, such a high degree of quantum control, as achieved in atoms,has not yet been demonstrated in these systems so far. Therefore, there is a search for quantum systems with even more potential [6].Recently, intrinsic defects in silicon carbide (SiC) have been proposed as eligible candidates for qubits [7,8]. Indeed, they reveal quantum spin coherence even at room temperature [9][10][11]. All of these experiments have been carried out under non-resonant optical excitation where all spins are controlled simultaneously. However, for spinbased information processing it is necessary to perform manipulations of selected spins, while the rest should remain unaffected. This demonstration in SiC is still an outstanding task.The selective spin control can be realized using a resonant optical excitation. As a rule, inhomogeneous broadening is much larger than the natural spectral linewidth, and such resonant addressing can be done on single centers only. To avoid this problem, we applied a special procedure to "freeze" silicon vacancy (V Si ) defects during their growth, allowing to preserve a high homogeneity inherent to Lely crystals. This is confirmed by the extremely sharp optical resonances in our samples. The spectral width of the V Si absorption lines is several µeV (ca. 1 GHz), which comparable with that of a single QD or a single NV center in diamond.We then demonstrate the selective spin initialization and readout by tuning the laser wavelength together with the spin manipulation by means of electron spin resonance (ESR). Such a double radio-optical resonance control indicates that the V Si defects strongly interact with light and are well decoupled from lattice vibr...

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“…cavity coupling | Purcell enhancement | silicon carbide | point defect | photonic crystal cavity S pin-active point defects in a variety of silicon carbide (SiC) polytypes have recently elicited a great deal of interest as the basis for solid-state single-photon sources, nanoscale quantum sensing, and quantum information science (1)(2)(3)(4)(5)(6)(7)(8)(9)(10). Such color centers in SiC offer access to emission at a variety of wavelengths, ranging from visible (600-800 nm) (7) to near-IR (850-1,300 nm) (1,2,6).…”

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Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

Bracher

Zhang

2017

Proc. Natl. Acad. Sci. U.S.A.

103

110

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Point defects in silicon carbide are rapidly becoming a platform of great interest for single-photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCCs) can serve as an efficient light–matter interface both to augment the defect emission and to aid in studying the defects’ properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of >80-fold are measured using multiple techniques. Additionally, the nature of the cavity coupling to the different ZPLs is examined.

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Silicon vacancy in SiC as a promising quantum system for single-defect and single-photon spectroscopy

Cited by 216 publications

References 43 publications

Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide

Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

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