Silicon surface treatment by pulsed nitrogen plasma

Baimbetov, F. B.; Ibraev, B. M.; Zhukeshov, A. M.

doi:10.1134/1.1453436

Cited by 4 publications

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“…The method of compression plasma treatment was firstly used in the production technology of semiconductor devices [9,10]. Application of this method allows obtaining on a semiconductor surface the chemically active structure for the creation on its base a porous material.…”

Section: Introductionmentioning

confidence: 99%

Influence of Preliminary Plasma Processing on Luminescent Properties of Porous Silicon

Галкин¹,

Yan

Chusovitin³

et al. 2014

SSP

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Measurements of radiative properties of porous silicon after compression plasma treatment have been carried out. Significant increase of photoluminescence intensity and blue shift of spectra have been observed on studied samples in comparison with porous layers formed on monocrystalline silicon without preliminary plasma treatment. An influence of long storage of plasma modified porous silicon layer on the intensity and spectral composition of photoluminescence has been checked. A rise of PL intensity during first moth of storage and following decrease of PL intensity in the next three months has been observed. Mechanisms of changes in a spectral composition of PL and alterations of PL intensity during storage have been discussed.

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Section: Introductionmentioning

confidence: 99%

Influence of Preliminary Plasma Processing on Luminescent Properties of Porous Silicon

Галкин¹,

Yan

Chusovitin³

et al. 2014

SSP

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show abstract

“…The technological applications of pulsed plasma flows for a semiconductors surface structure modification were submitted by the authors in [1]. This work is devoted to investigation of plasma flows influence on a various constructional materials.…”

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confidence: 99%

Surface Properties Changes Induced by Pulsed Plasma Flows

Zhukeshov¹,

Ibraev²,

Gabdullina³

2007

2007 IEEE 34th International Conference on Plasma Science (ICOPS)

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The purpose of the research was the study of pulsed plasma flows influence on durability superficial properties of metal alloys used on different industrial technology. The technological applications of pulsed plasma flows for a semiconductors surface structure modification were submitted by the authors in [1]. This work is devoted to investigation of plasma flows influence on a various constructional materials.The detailed description of experimental device is given in work [2]. The plasma accelerator has two cylindrical electrodes with diameters of 90 mm (external) and 24 mm (internal). The energy of the capacitor bank is 32 kJ. The discharge current represents a decreasing harmonically signal with the period 14 pts. The maximum power density and, hence, efficient acceleration of the plasma flow was obtained at a work chamber pressure of about 0.1 Torr and it was equal to 45 Joule/cm2 at a discharge voltage of 25 kV.The formation of the modified layer on a surface after plasma processing is typical for metals. However, the high density of energy results in formation of roughness relief on a surface. This undesirable phenomenon can be avoided if one uses small density of energy. In all cases when the value of melted energy achieved 15-20 J/sM2, the recrystallization of the surface area and structure modification took place on the depth about 10-30 ptm depending on materials. The character of structural changes in metals depends on the energy density and the introduced doze (a doze is equivalent of plasma pulses quantity). Character of structure changes depends also on working gas used and on accelerators operation mode.For the carbon steel with the ferrite as a basic structure, the formation of austenitic and martensitic phases is observed after processing. At the same time for stainless steel the formation of nitride hardening phases is usual at processing by nitric and air plasmas. The microhardness of common steels, processed with pulsed plasma, increases by a factor 1,5-5. Consequently, the wear resistance of this steel increases. In the case of constructional steels CT3, treated with the nitrogen pulses, this increase amounts to factor 4. This parameter was determined by abrasive method for seven samples treated by different quantity of pulses. The stainless steel samples (12X18N) were treated by several pulses. The phase structure analysis of the processed samples show the presence of two basic phases: iron nitride and austenite in the processed layer of the surface.

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Plasma diagnostics in a pulsed accelerator used for material processing

Zhukeshov

2007

J. Phys.: Conf. Ser.

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Silicon surface treatment by pulsed nitrogen plasma

Cited by 4 publications

References 0 publications

Influence of Preliminary Plasma Processing on Luminescent Properties of Porous Silicon

Influence of Preliminary Plasma Processing on Luminescent Properties of Porous Silicon

Surface Properties Changes Induced by Pulsed Plasma Flows

Plasma diagnostics in a pulsed accelerator used for material processing

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