Silicon Suboxides as Driving Force for Efficient Light‐Enhanced Hydrogen Generation on Silicon Nanowires

Ming, Tingsen; Turishchev, S. Yu.; Schleusener, Alexander; Parinova, E. V.; Koyuda, D. A.; Chuvenkova, O. A.; Schulz, Martin; Dietzek, Benjamin; Sivakov, Vladimir

doi:10.1002/smll.202007650

Cited by 14 publications

(5 citation statements)

References 31 publications

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“…Moreover, the amount of hydrogen generated in the darkness after 20 min of interaction with ethanol/water solution of natively decorated SiNW surfaces is approximately twice as high as that bare SiNW surfaces. Additionally, as was found in our previous studies, 25 the native AgNP (without additional nitric acid treatment) decorated SiNWs' surface electronic and atomic structure estimated by Xray spectroscopy using synchrotron irradiation has significantly different character in comparison to nitric acid treated surfaces (bare, ELD, or MR). The presence of the silicon suboxides with wide bandgap semiconductor characteristics was observed.…”

Section: Resultssupporting

confidence: 77%

Silicon Nanowires Decorated with Silver Nanoparticles for Photoassisted Hydrogen Generation

Ming

Dietzek‐Ivanšić

et al. 2022

ACS Appl. Energy Mater.

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Highly n-doped silicon nanowires (SiNWs) decorated with silver nanoparticles (AgNPs) at the top, middle, and bottom were produced using electroless silver deposition (ELD), silver mirror reaction (MR), and native AgNPs as a reference, respectively. Subsequently, hydrogen generation on SiNWs decorated with and without AgNPs was evaluated. Our results show that SiNWs decorated with native and MR AgNPs produce the highest and the lowest hydrogen amount under white light irradiation in 3 h, respectively. Moreover, for SiNWs with native AgNPs, the morphology of SiNWs after hydrogen generation was almost the same as the original array of SiNWs before hydrogen release, even after 24 h in water/ethanol (4:1; v/v) solution. However, the geometry of SiNWs decorated without and with AgNPs by ELD and MR was collapsed after hydrogen evolution. The detailed surface studies show that the sidewall surface of SiNWs with native AgNPs has a rougher topology and formed a stable layer of SiO x in water. Our observations strongly suggest that two hydrogen generation possibilities, i.e., SiNW oxidation and photostimulation, are jointly responsible for the efficient hydrogen generation. Additionally, the presence of AgNPs on the sidewall of the SiNW matrix can enhance the hydrogen generation rate. Our results open novel perspectives for the effective hydrogen generation based on nanostructured silicon.

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Section: Resultssupporting

confidence: 77%

Silicon Nanowires Decorated with Silver Nanoparticles for Photoassisted Hydrogen Generation

Ming

Dietzek‐Ivanšić

et al. 2022

ACS Appl. Energy Mater.

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“…We find that the Raman stretching modes provides more reasonable values. Also, the band gap and thus the photoluminescence peak position has been correlated with the amount of the chemical composition x 23 . Based on this correlation, the observed photoluminescence peak at room temperature would correspond x values of about 1.3 to 1.5.…”

Section: Experimental Methodsmentioning

confidence: 99%

Investigation of physical and electrical properties of a suboxide layer at Si/Si-hexafluoride interface

Kalem

2024

Sci Rep

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The silicon suboxide SiOx (x < 2.0) offers promising industrial application possibilities ranging from electrodes in lithium-ion batteries, which are used widely in electrical vehicles and portable devices to sensing applications. Therefore, a low cost, environmental friendly and high performance silicon oxide materials are required for an appropriate operation of any electronic gadget. In this work, we report on the physical and electrical properties of a suboxide layer of up to 1 μm, which was grown on silicon during the formation of a dielectric layer, namely the ammonium silicon hexafluoride. It is a stable oxide exhibiting light emission from 400 to 1700 nm offering scalable and cost-effective large area processing capability. The measurement results reveal interesting properties, which are required to be understood clearly before proceeding with any suitable application. The results have been analyzed using state-of-the-art physical and electrical characterization techniques such as ellipsometry, AFM, SEM, FTIR, photoluminescence lifetime and resistive switching measurements to determine structural, optical and electrical properties. At 300 K the carrier lifetime measurements reveal the lifetime values ranging from about few tens of picosecond up to 4500 picoseconds. Scanning probe analysis indicate a surface roughness of about 30 Å. Resistive memory forming was observed also in these layers at relatively low power thresholds. We provide a comprehensive description of the physical and electrical properties in order to clarify the origin of the observed features. The wavelength dependent real $${\varepsilon }_{1}(\omega )$$ ε 1 ( ω ) and the imaginary $${\varepsilon }_{2}\left(\omega \right)$$ ε 2 ω dielectric functions provided useful insights on optical properties. A lookout is given for the possible applications of this special SiOx dielectric oxide layer.

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“…Возможность изменения энергии квантов синхротронного излучения без изменений в его чрезвычайно высокой интенсивности является необходимым условием получения спектров XANES высокого разрешения. В ультрамягкой рентгеновской области спектра синхротронного излучения cпектроскопия XANES обладает высокой чувствительностью к локальному окружению атомов заданного сорта поверхности изучаемого материала или структуры, и поэтому особо актуальна для анализа наноструктур различного состава, в том числе на основе кремния [12][13][14][15][16] и олова [17][18][19][20][21]. В настоящей работе приводятся результаты исследований синхротронным методом XANES состава, атомного и электронного строения тонких слоев олова, сформированных методом молекулярно-лучевой эпитаксии и магнетронного распыления, на подложках кристаллического кремния.…”

Section: Introductionunclassified

Electronic structure and composition of tin oxide thin epitaxial and magnetron layers according to synchrotron XANES studies

Chuvenkova,

Boikov,

Ryabtsev

et al. 2024

kcmf

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The materials of the tin-oxygen system and thin-film structures based on them are modern and actual for the creation of a wide range of electronic devices, for example, resistive gas sensors of high sensitivity and short response time with low energy consumption and high manufacturability. An important direction in the study of such materials and structures is the control of properties with variations in technological formation regimes. Information on the composition, local atomic and electronic structure of thin layers of the tin-oxygen system with varying approaches to their production is in demand. The work is devoted to the study of the electronic structure of thin layers of tin oxides obtained by modern methods of molecular beam epitaxy and magnetron sputtering. A study of the local partial density of electronic states in the conduction band by X-ray absorption near edge structure spectroscopy of tin and oxygen has been carried out. The data were obtained using high-intensity synchrotron radiation, which allows varying the monochromatized radiation quantum energy without loss in intensity, that is necessary to obtain high-resolution X-ray spectral data. It is shown that the composition, local atomic surrounding, electronic spectrum and their features depend on the technology of formation and storage conditions of the studied structures. Synchrotron X-ray spectroscopy data show the presence of intermediate oxides of the tin-oxygen system in the studied materials after prolonged storage in laboratory conditions. The data obtained indicate the possibility of controlled variation in the composition, local atomic surrounding and electronic spectrum of thin-film structures of tin oxides of small thickness. The results of the work can be used in the formation and subsequent modification of thin and ultrathin layers of tin oxides by magnetron sputtering and molecular beam epitaxy, as well as in their further application as active layers of microelectronics devices

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Silicon Suboxides as Driving Force for Efficient Light‐Enhanced Hydrogen Generation on Silicon Nanowires

Cited by 14 publications

References 31 publications

Silicon Nanowires Decorated with Silver Nanoparticles for Photoassisted Hydrogen Generation

Silicon Nanowires Decorated with Silver Nanoparticles for Photoassisted Hydrogen Generation

Investigation of physical and electrical properties of a suboxide layer at Si/Si-hexafluoride interface

Electronic structure and composition of tin oxide thin epitaxial and magnetron layers according to synchrotron XANES studies

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