2013
DOI: 10.1063/1.4788705
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Silicon sub-bandgap photon linear detection in two-photon experiments: A photo-assisted Shockley-Read-Hall mechanism

Abstract: We investigate the linear response of silicon p-i-n diodes to sub-bandgap photons (1.4 μm-1.6 μm) that has been reported by many authors and left unexplored till then. The quantum efficiency of this mechanism is extremely low (typically 10−9) but has a drastic influence on silicon devices harnessing two-photon absorption. We show that this linear photonic current decreases with temperature, displaying an activation energy similar to the dark current one. We show that this behaviour is consistent with a photo-a… Show more

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Cited by 15 publications
(16 citation statements)
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“…The PASRH requires the existence of real electronic states inside the bandgap which are mostly due to defects in the semiconductor [10]. Thus, it is possible to retrieve the density of defects from our experiment.…”
Section: Resultsmentioning
confidence: 99%
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“…The PASRH requires the existence of real electronic states inside the bandgap which are mostly due to defects in the semiconductor [10]. Thus, it is possible to retrieve the density of defects from our experiment.…”
Section: Resultsmentioning
confidence: 99%
“…• A significant decrease of the PASRH level, by either cooling the detector [10], or thanks to fewer interactions with trap levels in more controlled active medium and smaller interaction volumes.…”
Section: Resultsmentioning
confidence: 99%
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“…This phenomenon has been studied in several materials (silicium, gallium arsenide) and is explained as a photo-assisted Shockley-Read-Hall (PASRH) process. 6,7 The second term is the degenerate two-photon absorption of the pump. 3 The last one comes from the non-degenerate E-Mail : baptiste.fix@onera.fr two-photon absorption (NDTPA), which is the absorption of pump and signal photon.…”
Section: Ndtpa Theorymentioning
confidence: 99%
“…For TM-polarized light, the structure exhibits a resonance around 1.47 μm, with a strong field enhancement in the intrinsic region of the junction. We emphasize that the field is thus localized far from the interfaces, which effectively reduces the chances of having single-photon absorption (SPA) due to defect-assisted transitions at the interfaces, [16] while ensuring a high extraction rate of the free carriers. We demonstrate both numerically and experimentally that the TPA-photocurrent can be enhanced by at least two orders of magnitude at resonance, compared to a non-resonant PD.…”
Section: Introductionmentioning
confidence: 99%