1955
DOI: 10.1063/1.1722034
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Silicon Solar Energy Converters

Abstract: Theory is given for the design of silicon solar energy converters commonly known as the Bell Solar Battery. Values are given for the various parameters in the design theory. Experimental data are presented and compared with the theoretical relations based on a simple model. It is found that with present techniques, units can be made with up to 6 percent efficiency in the conversion of solar radiant energy to electrical energy. An important factor in obtaining such high efficiencies is the reduct… Show more

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Cited by 313 publications
(71 citation statements)
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“…The narrow band gap and the interesting structural property of SnS make it a potential candidate for solar absorber in thin film solar cell and near infrared detector [7,8], as photovoltaic materials [9] and in holographic registrar system [10]. Thin films of SnS have shown a conversion efficiency in photovoltaic devices similar to the one found for silicon films (up to 25%) [11,12]. There are many traditional methods for the preparation of tin sulfide namely chemical vapour deposition [13], electrochemical deposition [14], molecular beam epitaxy (MBE) [15], spray pyrolysis [16], solvothermal [17], etc.…”
Section: Introductionmentioning
confidence: 97%
“…The narrow band gap and the interesting structural property of SnS make it a potential candidate for solar absorber in thin film solar cell and near infrared detector [7,8], as photovoltaic materials [9] and in holographic registrar system [10]. Thin films of SnS have shown a conversion efficiency in photovoltaic devices similar to the one found for silicon films (up to 25%) [11,12]. There are many traditional methods for the preparation of tin sulfide namely chemical vapour deposition [13], electrochemical deposition [14], molecular beam epitaxy (MBE) [15], spray pyrolysis [16], solvothermal [17], etc.…”
Section: Introductionmentioning
confidence: 97%
“…Однако избыточное утончение Λί-слоя яри значительной полезной поверхности фотоэлемента обусловливает снижение к π д за счет роста сопротивления слоя, оказывающегося снижение к. п. д. за у> "^ю че нным последовательно с внеш-ней нагрузкой. Вопрос о влиянии по-следовательных сопротивлений Л посл рассмотрен в работе, посвященной германиевым фотоэлементам 6 , а так-же Принсом 8 . Снижение величины й посл до минимума имеет сущест-венное значение.…”
Section: 5unclassified
“…Meanwhile, thermalization loss caused by excess photon energy will increase the temperature of silicon solar cells, thus degrading their performance. 11 It has been demonstrated that the portion of UV light (with wavelength shorter than 380 nm) that is usable by silicon solar cells is less than 30%. 12 It is rational to speculate that, if a semiconductor that has a relatively high photoresponse in the UV region can be employed as an UV absorber, it will be of great help in improving the conversion efficiency and reducing the thermalization loss of Si solar cells.…”
Section: Introductionmentioning
confidence: 99%