Silicon solar cells using natural inversion layers found in thermally-oxidized p-silicon

Ultraviolet Characteristics of a Silicon Inversion Layer for Applications in Radiometry

“…Using equations (1) and (2) above we can once again derive the photocurrent density of this device to be (Gartner [18], Brown et. al [19], Salter et al [20]):…”

“…The higher ultraviolet photosensitivity of the inversion layer photocell is mainly due to low recombination losses at the surface, since normally recombination rates are lower at a thermally oxidized silicon surface than at a diffused surface, Salter et. al [20]. Secondly, since diffusion induced damage is not present in the inversion layer structure, the minority carrier lifetimes should be higher than in the diffused junction structures, thus leading to higher photocurrent.…”

The influence of inversion layer on the characteristics of the contact-adjoining layer in solar-cell silicon Schottky MTIS structures

“…AS in [12, 131, we solve the problem in the simplest case of p-type silicoii ~i t h homogeneous coricentrations of acceptors ( N , ) and donors ( N , ] ) and of a n ahrupt stepped ri-p junction (see insiilatm, F~ and ei arc the permittivities of the semiconductor and insulator, respectively, yrn and x;,, the locations of the potential maximum with and without the image-force potential, respertivcly, @X is the effective barrier height for the Mnp structure, Go the maximum energy in tht spectrum of t,he acceptor-like surface states, E, the energy gap of the semiconductor, EF the Fermi Icvel, and C,, the diffusion potential difference accurate calculation of the field in the space charge region of an &SiO,-n'-p-N structure with p-base taking into account t h e mobile carrier charge, is given in [l4]. .\ccording to [14], t h e field distribution for samples with N , = 1015cn1-3 [p0 = -10 Qcm) at T = 300 K takes the form of a curve monotonically falling from the irisillator boundary arid then going over into a plateau ( E = const). At distance7 of l i p to 0.2 pm, it is described by a linear function, i.e.…”

Nouvelles techniques de réalisation de photopiles au silicium

“…Pour éviter la préparation de couches d'oxyde mince, il a été proposé récemment [149][150][151][152] d'employer des couches d'inversion en surface sous des électrodes de TiOx ou Si02 épaisses (qui servent en même temps de couches antiréfléchissantes) pour réaliser des cellules solaires. Des rendements intéressants, de l'ordre de 12 % ont été publiés et il semble donc que les problèmes de résistance superficielle de ces couches aient pu être maîtrisés notamment par un dessin optimal de la grille collectrice.…”