“…AS in [12, 131, we solve the problem in the simplest case of p-type silicoii ~i t h homogeneous coricentrations of acceptors ( N , ) and donors ( N , ] ) and of a n ahrupt stepped ri-p junction (see insiilatm, F~ and ei arc the permittivities of the semiconductor and insulator, respectively, yrn and x;,, the locations of the potential maximum with and without the image-force potential, respertivcly, @X is the effective barrier height for the Mnp structure, Go the maximum energy in tht spectrum of t,he acceptor-like surface states, E, the energy gap of the semiconductor, EF the Fermi Icvel, and C,, the diffusion potential difference accurate calculation of the field in the space charge region of an &SiO,-n'-p-N structure with p-base taking into account t h e mobile carrier charge, is given in [l4]. .\ccording to [14], t h e field distribution for samples with N , = 1015cn1-3 [p0 = -10 Qcm) at T = 300 K takes the form of a curve monotonically falling from the irisillator boundary arid then going over into a plateau ( E = const). At distance7 of l i p to 0.2 pm, it is described by a linear function, i.e.…”