Silicon slot fin waveguide on bonded double-SOI for a low-power accumulation modulator fabricated by an anisotropic wet etching technique

Byers, James; Debnath, Kapil; Arimoto, Hideo; Husain, Muhammad; Sotto, Moise; Zuo, Liang; Liu, Fayong; Ibukuro, Kouta; Khokhar, Ali Z.; Kiang, Kian Shen; Boden, Stuart A.; Thomson, David J.; Reed, Graham T.; Saito, Shinichi

doi:10.1364/oe.26.033180

Cited by 7 publications

(12 citation statements)

References 24 publications

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“…Figure 1B shows the left and right fins are maximally misaligned along the z-axis and (Bi,Bii) show the cut through of lines i-i ′ /ii-ii ′ in (B), showing the periodically repeating left (Bi) and right (Bii) waveguide structure. The m = 0 design (Figure 1A) has already been presented and experimentally demonstrated [41]. The focus on this work is the mismatched fin-waveguide (m = 0).…”

Section: Design and Simulationmentioning

confidence: 99%

“…Fabrication of the double-SOI platform and subsequent finwaveguide structure has been detailed elsewhere [41] and is simply outlined here. Five nanometers thermal oxide was grown on the surface of two (110) crystal-orientation SOI wafers (SOI thickness = 100, 115 nm), which were bonded and thinned creating the double-SOI substrate.…”

Section: Fabricationmentioning

confidence: 99%

“…Recently, fabrication methods have been developed that demonstrate that it is possible to realize bi-planar asymmetric finwaveguides, with the top-fin on one side of the waveguide freestanding whilst the lower-fin on the other side of the waveguide is connected to the buried oxide layer [41]. These asymmetric fins form a 1D pseudo-Bragg grating, the parameters of which can be defined to realize a photonic bandgap for example.…”

Section: Introductionmentioning

confidence: 99%

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10 nm SiO2 TM Slot Mode in Laterally Mismatched Asymmetric Fin-Waveguides

et al. 2021

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In this paper we demonstrate that by breaking the left/right symmetry in a bi-planar double-silicon on insulator (SOI) photonic crystal (PhC) fin-waveguide, we can couple the conventionally used transverse-electric (TE) polarized mode to the transverse-magnetic (TM) polarization slot-mode. Finite difference time domain (FDTD) simulations indicate that the TE mode couples to the robust TM mode inside the Brillouin zone. Broadband transmission data shows propagation identified with horizontal-slot TM mode within the TE bandgap for fully mismatched fabricated devices. This simultaneously demonstrates TE to TM mode conversion, and the narrowest Si photonics SiO2 slot-mode propagation reported in the literature (10 nm wide slot), which both have many potential telecommunication applications.

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Section: Design and Simulationmentioning

confidence: 99%

Section: Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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10 nm SiO2 TM Slot Mode in Laterally Mismatched Asymmetric Fin-Waveguides

et al. 2021

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“…5 (i), which is asymmetric against the flip-flop exchange between left and right fin arrays. This asymmetry was useful to allow novel patterning of a double SOI bonded wafer 43) to pattern the bottom layer from the top, as shown in Figs. 6 (c), (g), and (k).…”

Section: Novel Si Photonic Waveguidesmentioning

confidence: 99%

“…First, we have manually bonded two (110) SOI wafers with ∼ 10-nm-thick thermal oxide face-to-face without any patterning. 43) In wafer bonding, it is important to avoid any particle contaminations, which prevents sufficient adhesion between layers, such that it was ideal to bond before patterning. Then, the challenge was to pattern the bottom SOI layer from the standard top-down lithography technique.…”

Section: Novel Si Photonic Waveguidesmentioning

confidence: 99%

Si photonic waveguides with broken symmetries: applications from modulators to quantum simulations

Saito

Tomita

Sotto

et al. 2020

Jpn. J. Appl. Phys.

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Symmetries of waveguides determine fundamental properties of photons such as mode profiles, polarisation, and effective refractive indexes as well as practical properties affecting the propagation loss. Here, we review our recent progress on manipulating symmetries of silicon (Si) photonic waveguides. Starting from the strategic choice of Si-On-Insulator (SOI) wafer specifications, we established the process technologies to fabricate Si wire and slot waveguides with atomically-flat interfaces, defined by Si (111) planes. These waveguides have relatively low propagation loss (∼ 1 dB/cm), even though they were fabricated in a university line. By combining patterning and re-growth of deposited amorphous Si, we also fabricated an Si slot waveguide with a nano-meter-scale vertical oxide layer, which is useful for optical modulators and various sensing applications. We also fabricated a horizontal slot waveguide using our manually bonded double-SOI substrate. The self-limited alkali-wet-etching allowed us to pattern the bottom SOI layer on top of the top SOI layer, by properly designing the mask to align along the mirror asymmetric Si (110) surface, allowing to access to top and bottom SOI layers individually through connected multiple-fin arrays. The patterning technique can be readily applicable to the other platform such as Si/LiNbO 3 -hybrid wafers, and we discuss our design of electro-optic (EO) modulator towards zero-power consumptions. We also investigate photonic crystal waveguides with broken mirror symmetries. By manipulating the mismatch between adjacent photonic crystals across the waveguide made of line defects, we could continuously control the band gap of the photonic crystals. Moreover, the phase profiles of modes exhibited photonic graphene and poly-acetylene shapes, made of optical vortices with optical orbital angular momentum (OAM). This shows that the most energetically favourable configuration of a photonic material under the triangular lattice is topologically equivalent to an organic material. We discuss the potential for the photonic organic chemistry and possible applications in quantum technologies.

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PMMA sacrificial layer based reliable debonding of ultra-thin chips after lapping

Kumaresan

Dahiya

2021

Microelectronic Engineering

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Silicon slot fin waveguide on bonded double-SOI for a low-power accumulation modulator fabricated by an anisotropic wet etching technique

Cited by 7 publications

References 24 publications

10 nm SiO2 TM Slot Mode in Laterally Mismatched Asymmetric Fin-Waveguides

10 nm SiO2 TM Slot Mode in Laterally Mismatched Asymmetric Fin-Waveguides

Si photonic waveguides with broken symmetries: applications from modulators to quantum simulations

PMMA sacrificial layer based reliable debonding of ultra-thin chips after lapping

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