1990
DOI: 10.1016/0022-0248(90)90319-g
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Silicon sheets for solar cells grown from silicon powder by the SSP technique

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1992
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Cited by 14 publications
(5 citation statements)
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“…These two classic doping techniques that consist in the introduction of the dopant during the growth are not well adapted for crystalline sheet silicon growth methods based on zone melting recrystallization [1][2][3][4], for which the growth and doping steps can be separated. This separation avoids the contamination of the silicon gas source with boron-based gases and thus allows for its re-use in a closed circuit, dramatically enhancing the overall process efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…These two classic doping techniques that consist in the introduction of the dopant during the growth are not well adapted for crystalline sheet silicon growth methods based on zone melting recrystallization [1][2][3][4], for which the growth and doping steps can be separated. This separation avoids the contamination of the silicon gas source with boron-based gases and thus allows for its re-use in a closed circuit, dramatically enhancing the overall process efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…The SSP process (silicon sheet from powder) as shown in Figure 7.8 [10] consists of silicon powder being placed in a quartz form (e.g. the above mentioned spherical silicon powder can be used).…”
Section: 172mentioning
confidence: 99%
“…They were first applied for melting silicon powder layers to produce silicon ''SSP'' ribbons [7]. Using such a processor, first ZMR experiments were done starting around 1994, yielding some excellent solar cell results already on foreign substrates (9.3% on SiSiC ceramics [8], 11.0% on graphite [9]).…”
Section: Processor Developmentmentioning
confidence: 99%