Silicon ribbon growth by a capillary action shaping technique. Annual report (Quarterly technical progress report No. 9)

Abstract

DISCLAIMER Portions of this document may be illegible in electronic image products. Images are produced from the best available original document. NOTICE was p q u d as an account of wak spwmd by the Unitsd States Wtser t b Uaft#l Stam nor ths United States Dapatsnent d Energy, nm srmnIayws. nor aw of tl&r co~tnacton, or thair anrpbpms, m d r a s~~b ,~a i r n P~,~~~W~t 9 o r~o e r i b l l i t r f a the mxmmy, umpb*ness iu ~~ of m y Wonnation, a&tpmQaa, piodoct or procaaa &-&awd, or rqmmmr lhst W u& c~ould not tnfMgt prlvataly owned rights. This nwrt hns been reproduced directly from the best available copy. Amilab'le from the Natioml Technical Information Semice, U. S. Dtptment of Commerce, SpringEbld, V i r w 22161, PXie: P a p copy %.00 k o f i c h e $3.90 ERDA/JPL/954144-7713 Distribution Category UC-63 SILICON RIBBON GROWTH BY A CAPILLARY ACTION SHAPING TECHNIQUE G. H. Schwuttke, P r i n c i p a l I n v e s t i g a t o r , 914 -897 -3140 I n t e r n a t i o n a l Business Machines C o r p o r a t i o n Under JPL C o n t r a c t Number: 954144 ( S u b c o n t r a c t under NASA C o n t r a c t NAS7-100)