Silicon-plus photonics

Dai, Daoxin; Yin, Yanlong; Yu, Longhai; Wu, Hao; Liang, Di; Wang, Zhechao; Liu, Liu

doi:10.1007/s12200-016-0629-9

Cited by 8 publications

(6 citation statements)

References 91 publications

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“…In the past decade silicon photonics has been very promising because of its unique advantages, for example, the complementary metal‐oxide‐semiconductor (CMOS) compatibility, the ultrahigh integration density, etc. Various silicon photonic integrated devices have been developed successfully for the applications of optical fiber communications operating with the near‐infrared wavelength‐band of 1.31/1.55 µm . More recently, the mid‐infrared (mid‐IR) wavelength‐band of 2–20 µm has also been becoming very attractive for many important applications in optical communication, nonlinear photonics, lidar, and optical bio‐sensing .…”

Section: Introductionmentioning

confidence: 99%

High‐Speed and High‐Responsivity Hybrid Silicon/Black‐Phosphorus Waveguide Photodetectors at 2 µm

Yin

Cao

Guo

et al. 2019

Laser & Photonics Reviews

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107

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Silicon photonics is being extended from the near-infrared window of 1.3-1.5 µm for optical fiber communications to the mid-infrared (mid-IR) wavelength-band of 2 µm or longer for satisfying the increasing demands in many applications. Mid-IR waveguide photodetectors on silicon have attracted intensive attention as one of the indispensable elements for various photonic systems. However, when combining traditional semiconductor materials with silicon, there are some challenges due to lattice mismatch and thermal expansion mismatch. As an alternative, two-dimensional (2D) materials provide a new and promising option for enabling active photonic devices on silicon. Here black-phosphorus (BP) thin films with optimized medium thicknesses (40 nm) are introduced as the active material for light absorption and silicon/BP hybrid ridge waveguide photodetectors at 2 µm are demonstrated with a high responsivity of 306.7 mA W −1 at a low bias voltage of 0.4 V. The 3 dB-bandwidth is up to 1.33 GHz and an experiment of a 4.0 Gbit s −1 data receiving is also demonstrated.

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Section: Introductionmentioning

confidence: 99%

High‐Speed and High‐Responsivity Hybrid Silicon/Black‐Phosphorus Waveguide Photodetectors at 2 µm

Yin

Cao

Guo

et al. 2019

Laser & Photonics Reviews

Self Cite

107

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“…In contrast, it is usually very challenging to realize active photonic devices with pure silicon due to the intrinsic material properties of silicon, although great efforts have been made in the past years. In order to compensate the drawbacks of silicon, currently siliconplus photonics has attracted intensive attention as a promising solution by introducing some other optoelectronic materials [11,12]. For example, people have tried to introduce various functional materials to work together with silicon, including metals [13], III-V semiconductors [14,15], germanium [16], two-dimensional (2D) materials [17][18][19][20], polymer [21,22], magnetic-optical materials [23], and liquid-crystals [24].…”

Section: Introductionmentioning

confidence: 99%

“…For example, some special germaniumgrowth process is required for the fabrication of high-speed silicon/germanium photodetectors and modulators [33,34], while special bonding technologies were introduced for realizing hybrid silicon/III-V lasers, modulators and photodetectors [35]. These hybrid active silicon photonic devices have been used successfully for the applications of optical fiber communications operating with the nearinfrared (near-IR) wavelength-band of 1.31/1.55 μm [12,36].…”

Section: Introductionmentioning

confidence: 99%

Hybrid silicon photonic devices with two-dimensional materials

Liu

Chen

et al. 2020

Nanophotonics

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Abstract Silicon photonics is becoming more and more attractive in the applications of optical interconnections, optical computing, and optical sensing. Although various silicon photonic devices have been developed rapidly, it is still not easy to realize active photonic devices and circuits with silicon alone due to the intrinsic limitations of silicon. In recent years, two-dimensional (2D) materials have attracted extensive attentions due to their unique properties in electronics and photonics. 2D materials can be easily transferred onto silicon and thus provide a promising approach for realizing active photonic devices on silicon. In this paper, we give a review on recent progresses towards hybrid silicon photonics devices with 2D materials, including two parts. One is silicon-based photodetectors with 2D materials for the wavelength-bands from ultraviolet (UV) to mid-infrared (MIR). The other is silicon photonic switches/modulators with 2D materials, including high-speed electro-optical modulators, high-efficiency thermal-optical switches and low-threshold all-optical modulators, etc. These hybrid silicon photonic devices with 2D materials devices provide an alternative way for the realization of multifunctional silicon photonic integrated circuits in the future.

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“…This depends on the improvement of the structure designs and the fabrication processes. It is also necessary to develop silicon-plus nanophotonics, [164] for which novel optical materials are introduced on silicon. This allows the realization of active photonic devices on silicon, not only for on-chip light manipulation but also for photodetection [165] and light generation.…”

Section: Discussionmentioning

confidence: 99%

Silicon nanophotonics for on-chip light manipulation

Guo¹,

Dai

2018

Chinese Phys. B

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The field of silicon nanophotonics has attracted considerable attention in the past decade because of its unique advantages, including complementary metal-oxide-semiconductor (CMOS) compatibility and the ability to achieve an ultra-high integration density. In particular, silicon nanophotonic integrated devices for on-chip light manipulation have been developed successfully and have played very import roles in various applications. In this paper, we review the recent progress of silicon nanophotonic devices for on-chip light manipulation, including the static type and the dynamic type. Static onchip light manipulation focuses on polarization/mode manipulation, as well as light nanofocusing, while dynamic on-chip light manipulation focuses on optical modulation/switching. The challenges and prospects of high-performance silicon nanophotonic integrated devices for on-chip light manipulation are discussed.

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Silicon-plus photonics

Cited by 8 publications

References 91 publications

High‐Speed and High‐Responsivity Hybrid Silicon/Black‐Phosphorus Waveguide Photodetectors at 2 µm

High‐Speed and High‐Responsivity Hybrid Silicon/Black‐Phosphorus Waveguide Photodetectors at 2 µm

Hybrid silicon photonic devices with two-dimensional materials

Silicon nanophotonics for on-chip light manipulation

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